The present disclosure provides systems and methods for forming block crystals of a metal compound. In some embodiments, a method for forming block crystals of a metal compound may comprise (a) introducing a source metal into a furnace; (b) forming a complete or partial vacuum in the furnace and increasing a temperature of the furnace above a melting point of the source metal to form a liquid flow of the source metal; (c) breaking the liquid flow to generate particles of the source metal; (d) ionizing the particles in an ionization chamber to form ionized particles, wherein the ionization chamber has a temperature above a decomposition temperature of the metal compound; and (e) introducing the ionized particles into a growth chamber comprising a reactive gas that is reactive with the ionized particles, to thereby form the block crystals of the metal compound.

The present disclosure provides systems and methods for forming block crystals of a metal compound. In some embodiments, a method for forming block crystals of a metal compound may comprise (a) introducing a source metal into a furnace; (b) forming a complete or partial vacuum in the furnace and increasing a temperature of the furnace above a melting point of the source metal to form a liquid flow of the source metal; (c) breaking the liquid flow to generate particles of the source metal; (d) ionizing the particles in an ionization chamber to form ionized particles, wherein the ionization chamber has a temperature above a decomposition temperature of the metal compound; and (e) introducing the ionized particles into a growth chamber comprising a reactive gas that is reactive with the ionized particles, to thereby form the block crystals of the metal compound.

A production method for a crystal of a crystalline protein, the method including a step of inducing expression of a crystalline protein in Escherichia coli into which an expression construct of the crystalline protein has been introduced, and incubating the Escherichia coli for a predetermined time until a crystal of the crystalline protein is formed inside the Escherichia coli, and a crystal structure analysis method including a step of subjecting a crystal produced by the above-described production method to an X-ray crystal structure analysis together with the Escherichia coli, are useful as technologies for conveniently producing and analyzing a crystal of a protein.

A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO.sub.4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.

A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO.sub.4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.

Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.

Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.

There is provided a method for manufacturing a turbine component which enables obtaining a single crystal structure more easily and manufacturing a good turbine component. In the seed crystal placing step, the seed crystal is placed on the surface of the base in a manner that a first direction along <001> of the seed crystal has an angle within 15 degrees in absolute value in relation to a laminating direction. In the shaped layer forming step, scanning is performed in a manner that the scan direction has an angle within 20 degrees in absolute value in relation to a second direction being <001> orthogonal to the first direction of the seed crystal.