Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film (31) on the inner wall of a growth container (10) having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film (31) into contact with boron oxide melt containing silicon oxide to form a boron oxide film (32) containing silicon oxide on the inner wall of the growth container (10); forming raw material melt (34) above seed crystal (20) placed in and on the bottom section of the growth container (10); and solidifying the raw material melt (34) from the seed crystal (20) side to grow a semiconductor single crystal.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film (31) on the inner wall of a growth container (10) having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film (31) into contact with boron oxide melt containing silicon oxide to form a boron oxide film (32) containing silicon oxide on the inner wall of the growth container (10); forming raw material melt (34) above seed crystal (20) placed in and on the bottom section of the growth container (10); and solidifying the raw material melt (34) from the seed crystal (20) side to grow a semiconductor single crystal.

Crystal nucleation, and associated articles, systems, and methods, are generally described.

Crystal nucleation, and associated articles, systems, and methods, are generally described.

Methods and systems for low etch pit density 6 inch semi-insulating gallium arsenide wafers may include a semi-insulating gallium arsenide single crystal wafer having a diameter of 6 inches or greater without intentional dopants for reducing dislocation density, an etch pit density of less than 1000 cm.sup.−2, and a resistivity of 1×10.sup.7 Ω-cm or more. The wafer may have an optical absorption of less than 5 cm.sup.−1 less than 4 cm.sup.−1 or less than 3 cm.sup.−1 at 940 nm wavelength. The wafer may have a carrier mobility of 3000 cm.sup.2/V-sec or higher. The wafer may have a thickness of 500 μm or greater. Electronic devices may be formed on a first surface of the wafer. The wafer may have a carrier concentration of 1.1×10.sup.7 cm.sup.−3 or less.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

The gallium arsenide single crystal substrate has a circular main surface, and when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500° C. for 10 minutes is counted, the number C.sub.1 of etch pits in a first circular region having a diameter of 0.2D around the center of the main surface is 0 or more and 10 or less.

Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×10.sup.17 cm.sup.−3 or less and low dislocation density with an average dislocation density of 500/cm.sup.2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×10.sup.17 cm.sup.−3 or more and less than 1.5×10.sup.18 cm.sup.−3, an indium concentration of 1.0×10.sup.17cm.sup.−3 or more and less than 6.5×10.sup.18 cm.sup.−3, a carrier concentration of 5.5×10.sup.17 cm.sup.−3 or less, and an average dislocation density of 500/cm.sup.2 or less.

Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×10.sup.17 cm.sup.−3 or less and low dislocation density with an average dislocation density of 500/cm.sup.2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×10.sup.17 cm.sup.−3 or more and less than 1.5×10.sup.18 cm.sup.−3, an indium concentration of 1.0×10.sup.17cm.sup.−3 or more and less than 6.5×10.sup.18 cm.sup.−3, a carrier concentration of 5.5×10.sup.17 cm.sup.−3 or less, and an average dislocation density of 500/cm.sup.2 or less.