A method for producing an aligned boron nitride nanotube film includes drying a dispersion containing boron nitride nanotubes, a biopolymer, and a solvent.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

A method for producing an aligned boron nitride nanotube film includes drying a dispersion containing boron nitride nanotubes, a biopolymer, and a solvent.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0I.sub.m/I.sub.c0.002.

A silicon powder molding method, a silicon block, and their applications in the field of single crystal growth technology are provided. The silicon powder molding method of this application includes the following steps: placing a mold filled with silicon powder under a first pressure P.sub.1 condition, maintaining the first pressure condition P.sub.1 for a continuous duration of a first pressure time T.sub.1, and satisfying 50 MPaP.sub.1600 MPa, 7 minutes T.sub.115 minutes to obtain a silicon block. A medium applying the first pressure P.sub.1 is a liquid. Through pressure control, the molded silicon block is easily removed from the mold without breaking and generating dust. The silicon block is easy to crush when filling and has a controllable particle size distribution after crushing. The silicon block can be directly used for the production of Czochralski grown single crystals, increasing a loading density to 0.18 g/cm.sup.30.25 g/cm.sup.3.

A silicon powder molding method, a silicon block, and their applications in the field of single crystal growth technology are provided. The silicon powder molding method of this application includes the following steps: placing a mold filled with silicon powder under a first pressure P.sub.1 condition, maintaining the first pressure condition P.sub.1 for a continuous duration of a first pressure time T.sub.1, and satisfying 50 MPaP.sub.1600 MPa, 7 minutes T.sub.115 minutes to obtain a silicon block. A medium applying the first pressure P.sub.1 is a liquid. Through pressure control, the molded silicon block is easily removed from the mold without breaking and generating dust. The silicon block is easy to crush when filling and has a controllable particle size distribution after crushing. The silicon block can be directly used for the production of Czochralski grown single crystals, increasing a loading density to 0.18 g/cm.sup.30.25 g/cm.sup.3.

A method of forming an organic solid crystal (OSC) thin film includes forming a molecular feedstock of an organic solid crystal precursor and a molecular dopant, forming a layer of the molecular feedstock over a surface of a substrate, forming crystal nuclei from the organic solid crystal precursor within a nucleation region of the layer of molecular feedstock, and growing the crystal nuclei to form a doped organic solid crystal thin film.

A method of forming an organic solid crystal (OSC) thin film includes forming a molecular feedstock of an organic solid crystal precursor and a molecular dopant, forming a layer of the molecular feedstock over a surface of a substrate, forming crystal nuclei from the organic solid crystal precursor within a nucleation region of the layer of molecular feedstock, and growing the crystal nuclei to form a doped organic solid crystal thin film.