The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

A quartz or otherwise similar crystal (‘host crystal’) embedded with minerals, metals, homeopathic, organic/inorganic, and magnetic materials (which allow for magnetic interactions) and the method for embedded ‘host crystal’ with said materials is disclosed. The ‘host crystal’ can be any size, shape, cut, or color of crystal. A hole/depression is first drilled/etched anywhere on the quartz or similar ‘host crystal’, this hole is then filled with a chosen combination of materials using force/compression, and are semi-permanently sealed by compressing metal flake or powder onto/into the top of the material-filled hole in the ‘host crystal’. The compression of the materials inside of the ‘host crystal’ increases the natural piezoelectric, ionic emission, magnetic field, and vibrational properties/emissions, allows for magnetic interactions, increases their scientific and potential therapeutic effects, and has applications for decorative specimens, energy healing/homeopathic/vibrational therapies, water energizing/structuring, and is most often incorporated into gem, mineral, magnetic, and homeopathic light therapies.

Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.

Materials, products, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in products such as superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably essentially devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies.

An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

Provided are an atomic layer sheet that contains boron and oxygen as framework elements, is networked by nonequilibrium couplings having boron-boron bonds, and has a molar ratio of oxygen to boron (oxygen/boron) of less than 1.5, a laminated sheet containing a plurality of such atomic layer sheets and metal ions between ones of the sheets, and a thermotropic liquid crystal and a lyotropic liquid crystal containing these. In addition, there is provided a method for manufacturing an atomic layer sheet and/or a laminated sheet containing boron and oxygen, the method including: adding MBH.sub.4, where M represents an alkali metal ion, into a solvent containing an organic solvent in an inert gas atmosphere to prepare a solution; and exposing the solution to an atmosphere containing oxygen.

Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.

Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.