An electron vibrometer includes: an electron source providing a beam of primary electrons; a cantilever including: a receiver portion including: a gradient in thickness, a gradient in mass, atomic number of constituent atoms, or a combination thereof, the cantilever being disposed relative to the electron source such that the receiver portion of the cantilever receives the beam of primary electrons, and produces a plurality of scattered electrons from the receiver portion in response to receipt of the beam of primary electrons; and a charged particle detector that receives the plurality of scattered electrons from the receiver portion, and produces a detector signal comprising an amplitude that varies in relation to the gradient subject to receipt of the primary electrons, and the detector signal providing determination of the displacement of the cantilever.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

A method includes sending a probe beam into a beam path that induces a lateral displacement to the probe beam. The probe beam includes a plurality of orthogonal spatial modes that are entangled with each other. The method also includes measuring a phase of each spatial mode from the plurality of orthogonal spatial modes in the probe beam at a detector disposed within a near field propagation regime of the probe beam. The method also includes estimating the lateral displacement of the probe beam based on a phase of each spatial mode from the plurality of spatial modes in the probe beam after the beam path.

An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode workable across varying environments, including gaseous, fluidic and vacuum.

An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode workable across varying environments, including gaseous, fluidic and vacuum.

The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

An active noise isolation apparatus and method for cancelling vibration noise from the probe signal of a scanning tunneling microscope by generating a correction signal by convolution based on the probe signal and the sensor signal, which is based on the ambient vibration that adds noise to the probe signal.

An active noise isolation apparatus and method for cancelling vibration noise from the probe signal of a scanning tunneling microscope by generating a correction signal by convolution based on the probe signal and the sensor signal, which is based on the ambient vibration that adds noise to the probe signal.