The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

A detection device having an attached probe, the detection device including a base body (100) and a probe (200). The base body (100) is provided with a stage (140), the probe (200) is provided with a probe base body (210) and a tip (220) extending from a side surface of one end of the probe base body (210), another end of the probe base body (210) is adhered to the base body (100) via an adhesion piece (230), the probe base body (210) can be removed from the base body (100), and the tip (220) is close to the stage (140) and deployed in the direction thereof. The probe base body (210) is directly attached to the base body (100) and easily removed therefrom. It is therefore easy to replace the probe (200).

A method of operating a scanning probe system that includes a probe support and probes carried by the probe support is disclosed. Each probe includes a cantilever extending from the support to a free end and a tip carried by the free end. The system is operated to perform interaction cycles, each including in an approach phase, moving the support so that the tips move together towards the sample surface; in a detection step, generating a surface signal on detection of an interaction of the tip(s) of a first subset of the probes with the sample surface before the rest of the probes have interacted with the sample; in a response step changing a shape of the cantilever(s) of the first subset in response to the generation of the surface signal; and in a retract phase moving the support so that the tips retract together away from the sample surface.

A method of operating a scanning probe system that includes a probe support and probes carried by the probe support is disclosed. Each probe includes a cantilever extending from the support to a free end and a tip carried by the free end. The system is operated to perform interaction cycles, each including in an approach phase, moving the support so that the tips move together towards the sample surface; in a detection step, generating a surface signal on detection of an interaction of the tip(s) of a first subset of the probes with the sample surface before the rest of the probes have interacted with the sample; in a response step changing a shape of the cantilever(s) of the first subset in response to the generation of the surface signal; and in a retract phase moving the support so that the tips retract together away from the sample surface.

An automated system for controlling a conductive probe of a nanoprober system in situ to a charged particle beam (CPB) imaging system can include a nanoprober comprising an actuator and a conductive probe; signal measurement circuitry electrically coupled to the conductive probe and to receive an electrical signal from the conductive probe; and a hardware processor to execute operations. The operations can include activating a CPB within a first reference frame, the first reference frame associated with the CPB; causing, by a computerized control system, the CPB and the conductive probe to intersect; measuring an electrical response from the intersection of the CPB with the conductive probe; and determining a location of the conductive probe in a second reference frame based on the electric response from the intersection of the CPB with the conductive probe, the second reference frame associated with the conductive probe.

An automated system for controlling a conductive probe of a nanoprober system in situ to a charged particle beam (CPB) imaging system can include a nanoprober comprising an actuator and a conductive probe; signal measurement circuitry electrically coupled to the conductive probe and to receive an electrical signal from the conductive probe; and a hardware processor to execute operations. The operations can include activating a CPB within a first reference frame, the first reference frame associated with the CPB; causing, by a computerized control system, the CPB and the conductive probe to intersect; measuring an electrical response from the intersection of the CPB with the conductive probe; and determining a location of the conductive probe in a second reference frame based on the electric response from the intersection of the CPB with the conductive probe, the second reference frame associated with the conductive probe.

The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

An electron vibrometer includes: an electron source providing a beam of primary electrons; a cantilever including: a receiver portion including: a gradient in thickness, a gradient in mass, atomic number of constituent atoms, or a combination thereof, the cantilever being disposed relative to the electron source such that the receiver portion of the cantilever receives the beam of primary electrons, and produces a plurality of scattered electrons from the receiver portion in response to receipt of the beam of primary electrons; and a charged particle detector that receives the plurality of scattered electrons from the receiver portion, and produces a detector signal comprising an amplitude that varies in relation to the gradient subject to receipt of the primary electrons, and the detector signal providing determination of the displacement of the cantilever.