A method of lithography in a lithographic apparatus configured to transfer a pattern from a patterning device onto a substrate, the method including: determining a dose sensitivity of at least part of the pattern at a plurality of values of a dose, wherein the dose sensitivity is not a monotonically increasing or monotonically decreasing function of the dose. A computer product including a processor, a memory and a storage device, wherein the storage device at least stores values of, or a function describing, a dose sensitivity of at least part of a lithographic pattern at a plurality of values of dose, wherein the dose sensitivity is not a monotonically increasing or monotonically decreasing function of the dose.

For irradiating a layer a radiation beam is directed and focussed to a spot on the layer, relative movement of the layer relative to the lens is caused so that, successively, different portions of the layer are irradiated and an interspace between a surface of the lens nearest to the layer is maintained. Furthermore, at least a portion of the interspace through which the radiation irradiates the spot on the layer is maintained filled with a liquid, the liquid being supplied via a supply conduit. At least a portion of the liquid fills up a recess through which the radiation irradiates the spot.

A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

Provided herein are processes for the generation of composite polymer materials utilizing a single resin. The processes utilize diffusion between a region undergoing a polymerization reaction preferentially polymerizing one monomer component and an unreactive region. Diffusion and subsequent/concurrent polymerization results in a higher concentration of the more reactive monomer component in the reacting region and a higher concentration of the less reactive monomer components in the unreactive region. The unreactive region may be later polymerized. In embodiments, photopolymerization is used and the regions are generated by a mask or other mechanism to pattern the light.

Described is an optical system and method for operating an HUD. The optical system includes an imaging system that generates optical radiation based on image information, a display system that projects the optical radiation, a deflection device that deflects the projected optical radiation, and at least one optically transparent pane-shaped element that at least partially reflects the deflected optical radiation. The deflection device guides the projected optical radiation onto the pane-shaped element, the optical radiation hitting the pane-shaped element at an angle. The imaging system, the display system, the deflection device and the pane-shaped element are arranged to generate a virtual image of optical radiation containing the image information. The optical system includes first and second edge points of the pane-shaped element. The first edge point has a minimal distance (d.sub.min.sup.(1)) to the deflection device and the second edge point has a minimal distance (d.sub.min.sup.(2)) to the imaging system.

Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

A method includes processing a first silicon wafer using a first focus condition, the first silicon wafer comprising: a first test pattern and a second test pattern, the first test pattern and the second test pattern being different. The method further includes determining a first critical dimension for the first test pattern, determining a second critical dimension for the second test pattern, determining a delta focus value based on the first critical dimension and the second critical dimension, and processing a second silicon wafer with a second focus condition, the second focus condition based on the delta focus value.

For irradiating a layer a radiation beam is directed and focussed to a spot on the layer, relative movement of the layer relative to the lens is caused so that, successively, different portions of the layer are irradiated and an interspace between a surface of the lens nearest to the layer is maintained. Furthermore, at least a portion of the interspace through which the radiation irradiates the spot on the layer is maintained filled with a liquid, the liquid being supplied via a supply conduit. At least a portion of the liquid fills up a recess through which the radiation irradiates the spot.

An array substrate has regions in which an intermediate resist film thickness is formed and processed by an intermediate exposure amount which does not completely expose a resist, respectively on a drain electrode, source terminal, and a common connection wiring which are made of a second conductive film. Thin film patterns or a common wiring made of a first conductive film is formed in substantially entire regions on the bottom layers of the regions so that the heights from a substrate are substantially the same.