An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

A liquid treatment method includes: supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder; and thereafter supplying a second organic solvent to a substrate held by the substrate holder, the second solvent having a higher cleanliness than the first solvent.

A stripping-solution machine and working method thereof are provided. The stripping-solution machine includes: a plurality stages of chambers, which are arranged sequentially in order, wherein each stage of the chamber is correspondingly connected to a storage box; at least one filter device, wherein one end of the filter device is disposed to be connected to a storage box corresponding to a current stage chamber by a first pipe, and another end of the filter device is connected to a next stage chamber by a second pipe. Furthermore, a plurality of valve switches are at least disposed on the first pipe or the second pipe.

For enhancing productivity, an apparatus comprises a vertical type process furnace configured to simultaneously process N substrates (1<N); a loading chamber provided under the vertical type process furnace and configured to transfer the substrate retainer into or out of the vertical type process furnace; a plurality of single-wafer type process furnaces provided adjacent to the loading chamber, each of the plurality of single-wafer type process furnaces being stacked in at least 2 stages and configured to simultaneously process M substrates (M<N); and a transfer chamber module provided adjacent to the loading chamber and the plurality of the single-wafer type process furnaces and provided with a transfer device.

A substrate having a film of a coating liquid containing metal is held by a spin chuck, the film having been exposed in a predetermined pattern. A slit nozzle supplies a development liquid to a surface to be processed of the substrate supported by the spin chuck. A cleaning liquid for removing or dissolving metal is supplied by a cleaning nozzle to the surface to be processed of the substrate to which the development liquid has been supplied.

An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.

The shape of a camera body of a digital camera including a printer viewed from the front surface is a square shape, and an imaging optical system is positioned at the center of a camera body. An axis crossing an optical axis of the imaging optical system in a vertical direction is referred to as a vertical axis, and an axis crossing the optical axis in a horizontal direction is referred to as a horizontal axis. A grip portion is formed on the camera body at positions that are symmetric with respect to the vertical axis and symmetric with respect to the horizontal axis. The grip portion has an annular shape and a concave shape that is concave from the surface around the grip portion. The imaging optical system is positioned at the center of the annular grip portion in a case where the digital camera including a printer is viewed from the front surface of the camera body.

A process chamber having moveable electrodes for generating a parallel field within a process volume filled with a fluid is provided. In one implementation, a major axis of the process chamber is oriented vertically and a substrate support is disposed opposite a plurality of moveable electrodes extending along the major axis of the process chamber. In certain implementations, the substrate support is electrically floating and capable of rotating about a minor axis of the process chamber during processing of a substrate.

A resist film including a metallic component and a photosensitive material is formed on a surface of a substrate, and then a peripheral portion of the resist film on the substrate is irradiated with light by an edge exposer. Subsequently, development processing is performed with a development liquid from a nozzle on the exposed portion of the resist film. Thus, the part of the resist film formed on the peripheral portion of the substrate is removed. Thereafter, exposure processing is performed on the substrate in an exposure device, so that an exposure pattern is formed on the resist film. Then, a development liquid is supplied to the exposed substrate in a development processing unit, so that development processing is performed on the resist film.