A near memory system is provided for the calculation of a layer in a machine learning application. The near memory system includes an array of memory cells for storing an array of filter weights. A multiply-and-accumulate circuit couples to columns of the array to form the calculation of the layer.

A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.

A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.

A compute cell for in-memory multiplication of a digital data input and a balanced ternary weight, and an in-memory computing device including an array of the compute cells, are provided. In one aspect, the compute cell includes a set of input connectors for receiving modulated input signals representative of a sign and a magnitude of the data input, and a memory unit configured to store the ternary weight. A logic unit connected to the set of input connectors and the memory unit receives the data input and the ternary weight. The logic unit selectively enables one of a plurality of conductive paths for supplying a partial charge to a read bit line during a compound duty cycle of the set of input signals as a function of the respective signs of data input and ternary weight, and disables each of the plurality of conductive paths if at least one of the ternary weight and data input have zero magnitude.

A compute cell for in-memory multiplication of a digital data input and a balanced ternary weight, and an in-memory computing device including an array of the compute cells, are provided. In one aspect, the compute cell includes a set of input connectors for receiving modulated input signals representative of a sign and a magnitude of the data input, and a memory unit configured to store the ternary weight. A logic unit connected to the set of input connectors and the memory unit receives the data input and the ternary weight. The logic unit selectively enables one of a plurality of conductive paths for supplying a partial charge to a read bit line during a compound duty cycle of the set of input signals as a function of the respective signs of data input and ternary weight, and disables each of the plurality of conductive paths if at least one of the ternary weight and data input have zero magnitude.

Real time cognitive reasoning using a circuit with varying confidence level alerts including receiving a first set of data results and a second set of data results; transferring a first unit of charge from a first charge capacitor on the A-B circuit to a collection capacitor on the A-B circuit for each of the first set of data results that indicates a positive data point; transferring a second unit of charge from a second charge capacitor to the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the A-B circuit if the charge on the collection capacitor exceeds a first charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance with a first confidence level.

Real time cognitive reasoning using a circuit with varying confidence level alerts including receiving a first set of data results and a second set of data results; transferring a first unit of charge from a first charge capacitor on the A-B circuit to a collection capacitor on the A-B circuit for each of the first set of data results that indicates a positive data point; transferring a second unit of charge from a second charge capacitor to the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the A-B circuit if the charge on the collection capacitor exceeds a first charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance with a first confidence level.

A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.

A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.

A Bias Unit Element (UE) has a digital input, a sign input, and a chop clock. The sign input is exclusive ORed with the chop clock to generate a signed chop clock. Each Bias UE comprises a positive Bias UE and a negative Bias UE, each comprising groups of NAND gates generating an output and a complementary output, each of which are coupled to differential charge transfer lines through binary weighted charge transfer capacitors to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The chopped sign input enables the positive Bias UE when the sign bit is positive and enables the negative Bias UE when the sign bit is negative.