A system includes a volatile storage device, a read-only memory (ROM), a memory built-in self-test (BIST) controller and a central processing unit (CPU). The CPU, upon occurrence of a reset event, executes a first instruction from the ROM to cause the CPU to copy a plurality of instructions from a range of addresses in the ROM to the volatile storage device. The CPU also executes a second instruction from the ROM to change a program counter. The CPU further executes the plurality of instructions from the volatile storage device using the program counter. The CPU, when executing the plurality of instructions from the volatile storage device, causes the ROM to enter a test mode and the memory BIST controller to be configured to test the ROM.

A system includes a volatile storage device, a read-only memory (ROM), a memory built-in self-test (BIST) controller and a central processing unit (CPU). The CPU, upon occurrence of a reset event, executes a first instruction from the ROM to cause the CPU to copy a plurality of instructions from a range of addresses in the ROM to the volatile storage device. The CPU also executes a second instruction from the ROM to change a program counter. The CPU further executes the plurality of instructions from the volatile storage device using the program counter. The CPU, when executing the plurality of instructions from the volatile storage device, causes the ROM to enter a test mode and the memory BIST controller to be configured to test the ROM.

According to an embodiment, a storage device includes a plurality of storage elements, a plurality of readout circuits, and a delay circuit. The readout circuits include a first readout circuit and a second readout circuit different from the first readout circuit. The readout circuits each determines data stored in a corresponding one of the storage elements and outputs a result of the determination, in response to receipt of an activation signal. The delay circuit is connected at a first end to the first readout circuit and connected at a second end to the second readout circuit. The delay circuit supplies the activation signal to the second readout circuit with a time interval after supplying the activation signal to the first readout circuit.

A low read current architecture for memory. Bit lines of a cross point memory array are allowed to be charged by a selected word line until a minimum voltage differential between a memory state and a reference level is assured.

The present disclosure relates to a method of generating a high differential read current through a non-volatile memory, including receiving a voltage read input from a word line voltage generator, outputting a first current to a bit line true (BLT), outputting a second current to a bit line complement (BLC), and generating the high differential read current through a difference between the first current and the second current.

A non-volatile memory includes a cell array, a current supply circuit, a path selecting circuit and a judging circuit. The cell array includes plural multi-level memory cells in an m×n array. The cell array is connected with m word lines and n lines. The current supply circuit provides one of plural reference currents according to a current control value. The path selecting circuit is connected with the current supply circuit and the n bit lines. The judging circuit is connected with the path selecting circuit, and generates n output data. A first path selector of the path selecting circuit is connected with a path selecting circuit and a first bit line. A first judging device of the judging circuit is connected with the first path selector and generates a first output data.

A method is suggested for determining a state of a cell structure, wherein the cell structure includes several memory cells, the method includes: (i) detecting a first condition in a predetermined number of memory cells; and (ii) determining the state of the cell structure by assigning a second condition to the memory cells that do not show the first condition.

A bit cell includes a program device comprising a first source/drain region and a second source/drain region separated by a first channel. The first source/drain region, the second source/drain region, and the first channel are positioned along a first direction. The bit cell also includes an electrical fuse (eFuse) having a conduction path along the first direction. A conductive element is electrically connected with the first source/drain region and one end of the eFuse.

An EPROM device includes bit lines branching from a supply voltage line, a first group of enablement signal lines intersecting the bit lines, unit cells respectively located at cross points of the bit lines and the first group of enablement signal lines, pass transistors, load transistors, comparators, and enablement signal generators. One of the pass transistors and one of the load transistors are coupled in series between the supply voltage line and each of the bit lines. Each of the comparators receives voltages of both ends of any one of the load transistors to generate an output signal. Each of the enablement signal generators receives one of the output signals of the comparators and one of a second group of enablement signals and outputs one of a third group of enablement signals to turn off one of the pass transistors responsive to a program current reaching a reference value.

A memory module set includes a main integrated circuit (IC) for transmitting and receiving an electrical signal, a first group of memory modules including at least one memory module having a first pin unit connected to the main IC, and a second group of memory modules including at least one memory module having a second pin unit connected to the main IC. The groups of memory modules and the main IC are arrayed in a first direction on a substrate, and the second group of memory modules is offset with respect to the first group of memory modules in a second direction that is perpendicular to the first direction so as to have a position relative to the main IC in the second direction that is different from that of the first group of memory modules.