The disclosure provides a novel system and method of storing multi-bit information, including providing a nano-channel-based polymer memory device, the device having at least one memory cell comprising at least two addition nano-channels, each of the addition nano-channels arranged to add a unique chemical construct (or codes) to the polymer when the polymer enters the respective addition nano-channel, the polymer having a bead or origami on a non-writing end of the polymer; each nano-channel having a nano-port constriction having a port width which allows the polymer to pass through the nano-port, and does not allow the bead or origami to pass through and does not allow addition or deblocking enzymes (or beads attached thereto) to pass through the nano-port; successively steering the polymer through the nanopore into the addition nano-channels to add the codes to the polymer based on a predetermined digital data pattern to create the digital data pattern on the polymer.

A microfluidic device is provided. In one aspect, the microfluidic device includes a microfluidic channel, and a first actuator including an array of electrodes along the microfluidic channel. The first actuator is configured to generate a a potential wave along the microfluidic channel. Each electrode of the array can see its voltage changing cyclically according to a period multiplied by a natural number, wherein for at least one electrode the natural number equals 1. The cyclically changing voltages of adjacent electrodes can be out of phase. The cyclically changing voltages of every other electrode along the array can be in phase.

A storage device of an embodiment includes a first conductive layer; a second conductive layer; a fluid layer between the first conductive layer and the second conductive layer; particles in the fluid layer; a first control electrode between the first conductive layer and the second conductive layer; a first insulating layer between the first conductive layer and the first control electrode surrounding the fluid layer; and a second insulating layer between the first control electrode and the second conductive layer surrounding the fluid layer. In this storage device, a first cross-sectional area of the fluid layer in a first cross-section perpendicular to a first direction is smaller than a second cross-sectional area of the fluid layer in a second cross-section perpendicular to the first direction. The first cross-section includes the first control electrode, and the second cross-section includes the second insulating layer.

A liquid electrochemical memory device is provided. In one aspect, the device includes a memory region for storing at least two bits, the memory region having a first volume; and a liquid electrolyte region fluidically connected to the memory region, the liquid electrolyte region having a second volume larger than the first volume. The device further includes a working electrode exposed to the memory region, and a counter electrode exposed to the liquid electrolyte region. The device also includes an electrolyte filling the memory region and the liquid electrolyte region, in physical contact with the working electrode and the counter electrode, the electrolyte including at least two conductive species. The device further includes a control unit for biasing the working electrode and the counter electrode.

A liquid electrochemical memory device is provided. In one aspect, the device includes a memory region for storing at least two bits, the memory region having a first volume; and a liquid electrolyte region fluidically connected to the memory region, the liquid electrolyte region having a second volume larger than the first volume. The device further includes a working electrode exposed to the memory region, and a counter electrode exposed to the liquid electrolyte region. The device also includes an electrolyte filling the memory region and the liquid electrolyte region, in physical contact with the working electrode and the counter electrode, the electrolyte including at least two conductive species. The device further includes a control unit for biasing the working electrode and the counter electrode.

A memory device including at least one channel and a fluid including particles is provided. In one aspect, the channel includes a least some of the fluid. The memory device may further include an actuator configured to induce a movement of the particles in the channel; and a writing element configured to arrange the particles in a sequence, thereby yielding a sequence of particles in the channel. The particles may include first particles and second particles. The particles may be in a first state or a second state in the channel. In certain aspects, the channel is configured to preserve the sequence of the particles. The memory device may further include a reading element for detecting the sequence of the particles in the channel.

A liquid electrochemical memory device is provided. In one aspect, the device includes a memory region for storing at least two bits, the memory region having a first volume; and a liquid electrolyte region fluidically connected to the memory region, the liquid electrolyte region having a second volume larger than the first volume. The device further includes a working electrode exposed to the memory region, and a counter electrode exposed to the liquid electrolyte region. The device also includes an electrolyte filling the memory region and the liquid electrolyte region, in physical contact with the working electrode and the counter electrode, the electrolyte including at least two conductive species. The device further includes a control unit for biasing the working electrode and the counter electrode.

A liquid electrochemical memory device is provided. In one aspect, the device includes a memory region for storing at least two bits, the memory region having a first volume; and a liquid electrolyte region fluidically connected to the memory region, the liquid electrolyte region having a second volume larger than the first volume. The device further includes a working electrode exposed to the memory region, and a counter electrode exposed to the liquid electrolyte region. The device also includes an electrolyte filling the memory region and the liquid electrolyte region, in physical contact with the working electrode and the counter electrode, the electrolyte including at least two conductive species. The device further includes a control unit for biasing the working electrode and the counter electrode.

A memory device including at least one channel and a fluid including particles is provided. In one aspect, the channel includes a least some of the fluid. The memory device may further include an actuator configured to induce a movement of the particles in the channel; and a writing element configured to arrange the particles in a sequence, thereby yielding a sequence of particles in the channel. The particles may include first particles and second particles. The particles may be in a first state or a second state in the channel. In certain aspects, the channel is configured to preserve the sequence of the particles. The memory device may further include a reading element for detecting the sequence of the particles in the channel.

A neuromorphic architecture is formed from a laminate of non-woven carbon fiber reinforced polymer layers arranged in a plurality of different directions. A plurality of distributed nodes are formed through the laminate via transverse voids, and an encapsulant encapsulates an electrochemical fluid or gel such that the electrochemical fluid or gel may flow within the nodes and around the laminate. Electrical current flowing through the architecture creates reversible metal deposits at various nodes, depending on the path developed through the architecture, with a complexity sufficient for neuromorphic processing, and providing a writable and erasable memory. A neuromorphic actuator may be formed by combining shape memory materials with such a neuromorphic architecture, which may provide desired surface contours and/or actuations based on current in the neuromorphic architecture. Such neuromorphic architectures and actuators may be trained according to various methods, using feed-forward and/or feedback techniques.