An object of the present invention is to provide a charge stripping film in a charge stripping device of an ion beam, which has high heat resistance and no toxicity, with which there is no risk of activation, with which an ion beam can be made multivalent even if the charge stripping film is thin, and which is resistant to high-energy beam radiation over an extended period of time. The present invention comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film having a thermal conductivity of 20 W/mK or more in a film surface direction at 25° C., and a film thickness of the carbon film is more than 3 μm and less than 10 μm. The present invention also comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film produced by a polymer annealing method, and a film thickness of the carbon film is more than 3 μm and less than 10 μm.

An object of the present invention is to provide a charge stripping film in a charge stripping device of an ion beam, which has high heat resistance and no toxicity, with which there is no risk of activation, with which an ion beam can be made multivalent even if the charge stripping film is thin, and which is resistant to high-energy beam radiation over an extended period of time. The present invention comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film having a thermal conductivity of 20 W/mK or more in a film surface direction at 25° C., and a film thickness of the carbon film is more than 3 μm and less than 10 μm. The present invention also comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film produced by a polymer annealing method, and a film thickness of the carbon film is more than 3 μm and less than 10 μm.

An optical system may include a target, a laser source, and an optical lens assembly. The optical lens assembly may include a mounting flange mounted adjacent the laser source, an objective lens aligned between the laser source and the target, and at least one adjustment stage coupled between the mounting flange and the objective lens. The adjustment stage may include a ball joint having a ball joint body, a ball receiver tube, and adjustable fasteners coupling the ball joint body to the ball receiver tube. The adjustment stage may include a translation tube having ramps thereon, and adjustable fasteners coupled between the mounting flange and the translation tube. In addition, the adjustment stage may include the mounting flange having a threaded surface thereon, and a focus ring rotatably coupled to the threaded surface of the mounting flange.

A device for controlling trapped ions includes a first substrate of a semiconductor and/or dielectric material. A first metal structure is disposed at a main side of the first substrate. The device further includes a second substrate of a semiconductor and/or dielectric material. A second metal structure is disposed at a main side of the second substrate opposite the main side of the first substrate. A spacer is disposed between and bonded to the first and second substrates. The spacer includes an electrical interconnect which electrically connects the first metal structure to the second metal structure. A bond between the spacer and the first substrate or the spacer and the second substrate is a bond formed by waferbonding. At least one ion trap is configured to trap ions in a space between the first and second substrates, the first and second metal structures including electrodes of the ion trap.

A device for controlling trapped ions includes a first substrate of a semiconductor and/or dielectric material. A first metal structure is disposed at a main side of the first substrate. The device further includes a second substrate of a semiconductor and/or dielectric material. A second metal structure is disposed at a main side of the second substrate opposite the main side of the first substrate. A spacer is disposed between and bonded to the first and second substrates. The spacer includes an electrical interconnect which electrically connects the first metal structure to the second metal structure. A bond between the spacer and the first substrate or the spacer and the second substrate is a bond formed by waferbonding. At least one ion trap is configured to trap ions in a space between the first and second substrates, the first and second metal structures including electrodes of the ion trap.

Systems and methods relate to arranging atoms into 1D and/or 2D arrays; exciting the atoms into Rydberg states and evolving the array of atoms, for example, using laser manipulation techniques and high-fidelity laser systems described herein; and observing the resulting final state. In addition, refinements can be made, such as providing high fidelity and coherent control of the assembled array of atoms. Exemplary problems can be solved using the systems and methods for arrangement and control of atoms.

A quantum simulator includes a pseudo speckle pattern generator, a main vacuum chamber, an atomic gas supply unit, a light beam generator, a photodetector, and an atom number detector. The pseudo speckle pattern generator generates a pseudo speckle pattern in the inside of the main vacuum chamber by light allowed to enter the inside of the main vacuum chamber through the second window. The pseudo speckle pattern generator includes a controller, a light source, a beam expander, a spatial light modulator, and a lens. The controller sets a modulation distribution of the spatial light modulator based on a two-dimensional pseudo random number pattern.

A method of performing simultaneous entangling gate operations in a trapped-ion quantum computer includes selecting a gate duration value and a detuning frequency of pulses to be individually applied to a plurality of participating ions in a chain of trapped ions to simultaneously entangle a plurality of pairs of ions among the plurality of participating ions by one or more predetermined values of entanglement interaction, determining amplitudes of the pulses, based on the selected gate duration value, the selected detuning frequency, and the frequencies of the motional modes of the chain of trapped ions, generating the pulses having the determined amplitudes, and applying the generated pulses to the plurality of participating ions for the selected gate duration value. Each of the trapped ions in the chain has two frequency-separated states defining a qubit, and motional modes of the chain of trapped ions each have a distinct frequency.

A method of performing a computation using a quantum computer includes generating a plurality of laser pulses used to be individually applied to each of a plurality of trapped ions that are aligned in a first direction, each of the trapped ions having two frequency-separated states defining a qubit, and applying the generated plurality of laser pulses to the plurality of trapped ions to perform simultaneous pair-wise entangling gate operations on the plurality of trapped ions. Generating the plurality of laser pulses includes adjusting an amplitude value and a detuning frequency value of each of the plurality of laser pulses based on values of pair-wise entanglement interaction in the plurality of trapped ions that is to be caused by the plurality of laser pulses.

Provided is a method of reducing the magnitude of a quasi-static electric dipole field at the null position of an oscillating electric quadrupole field of an ion trap. The method includes trapping at least one ion in a trapping electric field. The trapping electric field includes an electric field amplitude; using an interferometry sequence including applying a first laser pulse when the trapping electric field amplitude includes a first trapping electric field amplitude; applying a second laser pulse when the trapping electric field amplitude includes a second trapping electric field amplitude different from the first electric field amplitude; and measuring a state of the ion; repeating the interferometry sequence in order to obtain a plurality of measurements of the state of the ion; determining a probability that the trapped ion changes state; and adjusting the trapping electric field based on the determined probability.