A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.

A multifunctional assembly having a resistive element a conductive element in electrical communication with the resistive element, the conductive element defining at least one of a plurality of multifunctional zones of the resistive element, wherein the conductive element is configured to direct a flow of electricity across at least one of the plurality of multifunctional zones of the resistive element in a preselected manner.

A multifunctional assembly having a resistive element a conductive element in electrical communication with the resistive element, the conductive element defining at least one of a plurality of multifunctional zones of the resistive element, wherein the conductive element is configured to direct a flow of electricity across at least one of the plurality of multifunctional zones of the resistive element in a preselected manner.

An object is to provide a shunt resistor module that is reduced in size, can handle a large current, and can accurately detect current. A shunt resistor module of the present invention includes: a shunt resistor that includes a plurality of resistor bodies having a columnar shape, and electrodes that are located at both ends of each of the plurality of resistor bodies; and a circuit board that includes a plurality of through-holes that can house the plurality of resistor bodies, and a plurality of voltage detection terminals that detects a voltage between the electrodes of the shunt resistor that has been inserted into the plurality of through-holes, and each of the plurality of voltage detection terminals is collected near a center of gravity of the shunt resistor.

A wiring module to be attached to a plurality of power storage elements each having an electrode terminal, the wiring module including: a bus bar to be connected to the electrode terminals; and a flexible substrate that is flexible, wherein the bus bar has an extension portion that extends toward the flexible substrate, the extension portion has a through hole, the flexible substrate side of the through hole is closed off by the flexible substrate, the flexible substrate has a first conductive path for detecting the temperature of an object, and the first conductive path is connected to a thermistor, and the thermistor is disposed in the through hole, the through hole is filled with a resin, and the thermistor is covered with the resin.

The present invention relates to a shunt resistor for current detection. The shunt resistor (1) includes: a resistance element (5) having a plate shape; and electrodes (6, 7) connected to both end surfaces (5a, 5b) of the resistance element (5), wherein the electrodes (6, 7) have cut portions (11, 12), respectively, the cut portions (11, 12) extending parallel to joint portions (8, 9) of the resistance element (5) and the electrodes (6, 7), and each of the cut portions (11, 12) is located at a position where a relationship Y≤0.80X-1.36 holds, where Y is a distance from each joint portion (6, 7) to each cut portion (11, 12), and X is a length of the joint portions (6, 7) in a width direction of the electrodes (6, 7).

The present invention relates to a shunt resistor for current detection. The shunt resistor (1) includes: a resistance element (5) having a plate shape; and electrodes (6, 7) connected to both end surfaces (5a, 5b) of the resistance element (5), wherein the electrodes (6, 7) have cut portions (11, 12), respectively, the cut portions (11, 12) extending parallel to joint portions (8, 9) of the resistance element (5) and the electrodes (6, 7), and each of the cut portions (11, 12) is located at a position where a relationship Y≤0.80X-1.36 holds, where Y is a distance from each joint portion (6, 7) to each cut portion (11, 12), and X is a length of the joint portions (6, 7) in a width direction of the electrodes (6, 7).

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.