A temperature sensor includes: a first supporting film made of an electric insulation material; a second supporting film that is made of an electric insulation material and is stacked on the first supporting film; and a sensor element provided between the first supporting film and the second supporting film. The sensor element includes a thermosensitive body having electric characteristics that change with temperature, and a first lead pattern and a second lead pattern that are electrically connected to the thermosensitive body. The first supporting film and the second supporting film are disposed to face each other in a region where the thermosensitive body is provided.

A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L.sub.0 of a length L of an observed peeled portion to a length L.sub.0 of the bonding interface in an observation field is 0.16 or less.

The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm.

A damascene method for manufacturing a thin film resistor (TFR) module is provided. A pair of heads are formed spaced apart from each other. A dielectric region is deposited over the pair of heads, and an opening extending over both heads is formed in the dielectric region. A TFR layer is deposited over the dielectric region and extending into the opening to define a cup-shaped TFR layer structure including (a) a laterally-extending TFR element base conductively connected to both heads and (b) vertical ridges extending upwardly from the laterally-extending TFR element base. A high density plasma (HDP) ridge removal process is performed to remove or shorten the vertical ridges from the cup-shaped TFR layer structure, thereby defining a TFR element having removed or shorted vertical ridges. The removal or shortening of the vertical ridges may improve the temperature coefficient of resistance (TCR) characteristic of the TFR element.

A damascene method for manufacturing a thin film resistor (TFR) module is provided. A pair of heads are formed spaced apart from each other. A dielectric region is deposited over the pair of heads, and an opening extending over both heads is formed in the dielectric region. A TFR layer is deposited over the dielectric region and extending into the opening to define a cup-shaped TFR layer structure including (a) a laterally-extending TFR element base conductively connected to both heads and (b) vertical ridges extending upwardly from the laterally-extending TFR element base. A high density plasma (HDP) ridge removal process is performed to remove or shorten the vertical ridges from the cup-shaped TFR layer structure, thereby defining a TFR element having removed or shorted vertical ridges. The removal or shortening of the vertical ridges may improve the temperature coefficient of resistance (TCR) characteristic of the TFR element.

A three-dimensional thermistor device and a manufacturing method thereof. The three-dimensional thermistor device comprising a thermistor array formed on a base layer extending in first and second directions. Where the thermistor array comprises: thermistor pattern layers and insulating layers stacked alternately on the base layer in a third direction; each thermistor pattern layer including a continuous electrically conductive first trace disposed along a first path extending in both the first and second directions, and each insulating layer including an electrically conductive first via extending through the insulating layer in the third direction to electrically connect the first traces to each other. Where successive electrical connections between the respective first vias on the stacked insulating layers and the respective first traces on the stacked thermistor layers form a continuous electrical first thermistor element extending in the first, second and third directions across multiple of the thermistor pattern layers.

A surge protection apparatus may include an input terminal; an output terminal, the output terminal electrically coupled to the input terminal; a ground terminal, the ground terminal electrically coupled to the input terminal and output terminal; a positive temperature coefficient (PTC) fuse, the PTC fuse connected in electrical series between the input terminal and output terminal; a crowbar device, the crowbar device electrically connected to the ground terminal and output terminal, wherein the crowbar device is in electrical series with the PTC fuse between the input terminal and ground terminal; and a central frame portion, the central frame portion electrically coupled to the input terminal, output terminal and ground terminal, wherein the crowbar device is disposed on a first side of the central frame portion and the PTC fuse is disposed on a second side of the central frame portion, opposite the first side.

One aspect is a resistor component for surface mounting on a printed circuit board, including a ceramic substrate with a first side and an opposite second side. A sinterable metallization is at least in some regions arranged on the second side. A resistance element comprising a metal layer is arranged at least in some regions on the first side of the ceramic substrate with a first connection and a second connection. An insulation layer is arranged at least in some regions on the resistance element and the ceramic substrate. A first region on the first connection and a second region on the second connection remain uncovered by the insulation layer. A first contact pad electrically contacts the first connection via the first region, and a second contact pad electrically contacts the second connection via the second region. The first contact pad at least in some regions covers a first surface region of the insulation layer and the second contact pad at least in some regions covers a second surface region of the insulation layer, and the first and the second contact pads are arranged spatially separated from one another on the insulation layer.

Aspects of the disclosure relate to apparatus and methods for producing a downhole electrical component, having steps of providing a non-conductive polymer substrate, establishing an active area on the non-conductive polymer substrate, patterning the active area on the non-conductive polymer substrate with a conductive material through an additive manufacturing process and incorporating the patterned non-conductive polymer substrate into a final arrangement.

A chip resistor including: a rectangular parallelepiped insulating substrate; a strip-shaped resistor; a pair of front electrodes formed on a front surface of the resistor at both ends in the longitudinal direction; an insulating protective layer; and a pair of end face electrodes formed at both ends of the insulating substrate in the longitudinal direction, each of which is connected to each end face of the resistor, corresponding one of the front electrodes, and protective film; and a pair of external electrodes, wherein a cross-sectional shape of each of the front electrodes is almost a triangle in which a side of the end face has a maximum height, and a shape of an end face of each of the end face electrodes is almost a square.