Patent classifications
H01H49/00
MEMS dual substrate switch with magnetic actuation
Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.
MEMS dual substrate switch with magnetic actuation
Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.
ELECTROMAGNETIC RELAY AND METHOD OF MANUFACTURING ELECTROMAGNETIC RELAY
A press-fit fixing portion fixes a drive unit and a relay unit by press-fitting a claw portion and the recess portion. A sealing member is provided on an outside of the relay unit and the drive unit. An inner cover forms a sealed space for sealing an arc-extinguishing gas together with the sealing member. An electromagnetic relay is configured to make it possible both an adjustment of a press-fitting amount of the claw portion and the recess portion and an adjustment of the gap between a ceramic insulator at an end of a shaft and a movable element by making each of the relay unit and the drive unit in a manufacturing process to the same state as in when a magnetizing coil is energized.
ELECTROMAGNETIC RELAY AND METHOD OF MANUFACTURING ELECTROMAGNETIC RELAY
A press-fit fixing portion fixes a drive unit and a relay unit by press-fitting a claw portion and the recess portion. A sealing member is provided on an outside of the relay unit and the drive unit. An inner cover forms a sealed space for sealing an arc-extinguishing gas together with the sealing member. An electromagnetic relay is configured to make it possible both an adjustment of a press-fitting amount of the claw portion and the recess portion and an adjustment of the gap between a ceramic insulator at an end of a shaft and a movable element by making each of the relay unit and the drive unit in a manufacturing process to the same state as in when a magnetizing coil is energized.
Electromechanical power switch integrated circuits and devices and methods thereof
An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.
Electromechanical power switch integrated circuits and devices and methods thereof
An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.
MEMS device built on substrate with ruthenium based contact surface material
A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.
MEMS device built on substrate with ruthenium based contact surface material
A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.
ARC BOX AND ELECTROMAGNETIC CONTACTOR COMPRISING SAME
An arc box and an electromagnetic contactor comprising same are disclosed. The arc box according to an embodiment of the present disclosure comprises a coupling protrusion. The coupling protrusion is inserted into and coupled to a grid coupling hole of an arc chamber. Therefore, the arc chamber can be stably coupled to the arc box. In one embodiment, the coupling can be performed through snap fastening. Therefore, the arc chamber and the arc box can be easily coupled. A rib part is formed on the arc box. The rib part is positioned to be adjacent to the coupled arc chamber so as to prevent pitching of the arc chamber. Therefore, the arc chamber coupled to the arc box can stably maintain a stopping state.
MEMS Device Built On Substrate With Ruthenium Based Contact Surface Material
A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.