H03B5/00

METHODS AND APPARATUS OF CHARGE-SHARING LOCKING WITH DIGITAL CONTROLLED OSCILLATORS

An integrated circuit device includes a digitally controlled oscillator (DCO), two charge-sharing capacitors, two charge-sharing switches, two pre-charge switches, and two DACs. The DCO has a first inverter and a second inverter. A first charge-sharing capacitor has a first terminal coupled to an input terminal of the first inverter through a first charge-sharing switch. A first DAC has an output terminal coupled to the first terminal of the first charge-sharing capacitor through a first pre-charge switch. A second charge-sharing capacitor has a first terminal coupled to an input terminal or an output terminal of the second inverter through a second charge-sharing switch. A second DAC has an output terminal coupled to the first terminal of the second charge-sharing capacitor through a second pre-charge switch.

Variable capacitance circuit for phase locked loops

A variable capacitance circuit may operate a Metal Oxide Semiconductor (MOS) transistor or other semiconductor device to switch a capacitor in and out. Several circuits may be combined in a parallel network having offset bias voltages, such that the combined network may produce a variable capacitance over a large voltage range. The variable capacitance circuit may be incorporated into a phase locked loop (PLL) circuit where similar devices may be configured to produce a voltage reference as part of the PLL circuitry. Such a circuit may be immune to temperature, process, or voltage variances, since the current pulse magnitude times the low pass filter resistance times the sensitivity of a controlled voltage oscillator can be held constant.

TRANSPOSED DELAY LINE OSCILLATOR AND METHOD
20230231545 · 2023-07-20 ·

A transposed delay line oscillator including a mode selection filter and a transposed delay line is provided. An output of the transposed delay line is coupled to an input of the mode selection filter to establish an oscillator loop. Based on the transposed delay line output, the mode selection filter generates a mode selection signal including an isolated oscillatory mode, in a Radio Frequency (RF) band. The transposed delay line receives the mode selection signal for transposition to an intermediate frequency of an intermediate frequency (IF) delay line. The IF delay line includes a delay filter and a phase noise suppression loop configured to suppress de-correlated transposition phase noise resulting from a delay of the delay filter. Suppression of phase noise in the IF delay line enables cancellation of transposition phase noise when transposing the IF delay line output to the RF band.

QUARTZ CRYSTAL DEVICE, CRYSTAL UNIT, AND CRYSTAL CONTROLLED OSCILLATOR
20220416721 · 2022-12-29 · ·

A quartz crystal device includes a package, a pedestal, and a crystal element. The pedestal is disposed in the package. The crystal element is bonded to the pedestal at four points. An angle formed by a center line connecting midpoints of both short sides of the crystal element and a straight line connecting a center point of the center line and each of bonding points is 22° or more and 30° or less.

TRANSPOSED DELAY LINE OSCILLATOR AND METHOD
20220329239 · 2022-10-13 ·

A transposed delay line oscillator including a mode selection filter and a transposed delay line is provided. An output of the transposed delay line is coupled to an input of the mode selection filter to establish an oscillator loop. Based on the transposed delay line output, the mode selection filter generates a mode selection signal including an isolated oscillatory mode, in a Radio Frequency (RF) band. The transposed delay line receives the mode selection signal for transposition to an intermediate frequency of an intermediate frequency (IF) delay line. The IF delay line includes a delay filter and a phase noise suppression loop configured to suppress de-correlated transposition phase noise resulting from a delay of the delay filter. Suppression of phase noise in the IF delay line enables cancellation of transposition phase noise when transposing the IF delay line output to the RF band.

Quartz crystal device, crystal unit, and crystal controlled oscillator
11626838 · 2023-04-11 · ·

A quartz crystal device includes a package, a pedestal, and a crystal element. The pedestal is disposed in the package. The crystal element is bonded to the pedestal at four points. An angle formed by a center line connecting midpoints of both short sides of the crystal element and a straight line connecting a center point of the center line and each of bonding points is 22° or more and 30° or less.

Quartz crystal device, crystal unit, and crystal controlled oscillator
11626838 · 2023-04-11 · ·

A quartz crystal device includes a package, a pedestal, and a crystal element. The pedestal is disposed in the package. The crystal element is bonded to the pedestal at four points. An angle formed by a center line connecting midpoints of both short sides of the crystal element and a straight line connecting a center point of the center line and each of bonding points is 22° or more and 30° or less.

SOLID STATE MICROWAVE GENERATOR
20170338829 · 2017-11-23 ·

An apparatus includes a spin torque oscillator, a sensor, and a processing unit. The spin torque oscillator is configured to receive a current and to generate a microwave output signal. The sensor is configured to detect the microwave output signal and to detect changes to frequency of the detected microwave output signal responsive to changes in an external magnetic field. The processing unit is configured to receive a sensed signal from the sensor. The processing unit is further configured to process the sensed signal and the changes to the frequency to determine magnitude and direction associated with the external magnetic field.

CMOS VARACTOR WITH INCREASED TUNING RANGE

A varactor is described that may be constructed in CMOS and has a high tuning range. In some embodiments, the varactor includes a well, a plurality of gates formed over the well and having a capacitive connection to the well, the gates comprising a first subset of the gates that are adjacent and consecutive and coupled to a positive pole of an excitation oscillation signal, and a second subset of the gates that are adjacent and consecutive and coupled to a negative pole of the excitation oscillation signal, and a plurality of source/drain terminals formed over the well and having an ohmic connection to the well, each coupled to a respective gate to receive a control voltage to control the capacitance of the varactor.

CMOS VARACTOR WITH INCREASED TUNING RANGE

A varactor is described that may be constructed in CMOS and has a high tuning range. In some embodiments, the varactor includes a well, a plurality of gates formed over the well and having a capacitive connection to the well, the gates comprising a first subset of the gates that are adjacent and consecutive and coupled to a positive pole of an excitation oscillation signal, and a second subset of the gates that are adjacent and consecutive and coupled to a negative pole of the excitation oscillation signal, and a plurality of source/drain terminals formed over the well and having an ohmic connection to the well, each coupled to a respective gate to receive a control voltage to control the capacitance of the varactor.