A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.

A communications system may include radio frequency (RF) circuitry, an antenna assembly, and an RF cable coupling the RF circuitry and the antenna assembly. The antenna assembly may include an antenna and RF impedance selection circuitry coupled thereto. The RF circuitry may be configured to communicate RF signals with the antenna via the RF cable, and communicate RF impedance selection signals to the RF impedance selection circuitry via the RF cable and using an alternating pulse width modulation scheme.

A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.

An aluminum alloy includes 6 to 8.5 wt % of magnesium (Mg), 4 to 6 wt % of silicon (Si), 0.4 to 0.8 wt % of iron (Fe), 0.2 to 0.5 wt % of manganese (Mn), 0.01 to 0.1 wt % of copper (Cu), 0.05 to 0.15 wt % of titanium (Ti), and the remainder being aluminum (Al), and may be in use for die-casting electronic components or communication components which require weight reduction and high corrosion resistance.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.

A transistor device package includes a component assembly comprising an interconnect structure, a transistor die having a front surface including gate, drain, and source terminal on a first surface of the interconnect structure, and one or more passive electrical components electrically coupled to the gate, drain, and/or source terminal by the interconnect structure. A thermally conductive flange is attached to a back surface of the transistor die, which is opposite the front surface, by a conductive adhesive. Respective patterns of the conductive adhesive are provided on the first surface of the interconnect structure, and least one of the respective patterns of the conductive adhesive provides an input, output, or ground signal path for the transistor device package. Related fabrication methods are also discussed.

The present disclosure relates to a communication technique for converging Internet of Things (IoT) technology with a 5.sup.th Generation (5G) communication system for supporting a higher data transfer rate beyond a 4.sup.th Generation (4G) system, and a system therefor. The disclosure can be applied to intelligent services (e.g., smart homes, smart buildings, smart cities, smart or connected cars, health care, digital education, retail business, and services associated with security and safety) on the basis of 5G communication technology and IoT-related technology. An antenna module is provided. The antenna module includes an antenna, and at least one transmission line configured to transmit a first signal through the antenna for transmission or receive a second signal through the antenna for reception. The length of the transmission line may be determined based on the impedance when the first signal or the second signal flows through the transmission line.