A semiconductor structure is provided that includes: a plurality of pixel sections arranged in a substrate, each pixel section having a plurality of sides; and first pixel section of the plurality of pixel sections including: a photo detector; and a vertical transfer gate (VTG) structure disposed above the photo detector, the VTG structure having a laterally extending body portion and a plurality of wall sections connected to end regions of the body portion that vertically extend into the substrate and laterally extend adjacent to a side of the pixel section.