Provided are a polyhedron of which the upper width is narrower than the lower width, a manufacturing method therefor, and a photoelectric conversion device comprising the same. The photoelectric conversion device comprises: a substrate; a polyhedron disposed on the substrate and of which the upper width is narrower than the lower width; and a semiconductor layer disposed on the polyhedron. The photoelectric conversion device to which the polyhedron, of which the upper width is narrower than the lower width, is applied can have improved photoelectric conversion efficiency due to structural characteristics of the polyhedron.

A photovoltaic module generates electrical power when installed on a roof. The module is constructed as a laminated sandwich having a transparent protective upper layer adhered to a photovoltaic layer. The photovoltaic layer is adhered to the top of a rigid layer, preferably formed from a fiber reinforced plastic. A tapered edge seal is disposed about the peripheral outer edge of the module, so that water and debris easily run off Preferably, the tapered edge seal is disposed adjacent the photovoltaic layer, and above the rigid substrate layer. The tapered edge seal is thinner at the outer peripheral portion thereof than at a portion thereof adjacent the photovoltaic layer. The laminated module preferably has a layer of double stick tape on the bottom to adhere the module to the surface of a roof.

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

A method of forming a semiconductor structure includes implanting neutral dopants in a first region of a substrate to form a first etching stop feature, the first etching stop feature having a depth D.sub.1. The method further includes implanting neutral dopants in a second region of the substrate to form a second etching stop feature, wherein the second etching stop feature has a depth D.sub.2, and D.sub.1 is different from D.sub.2. The method further includes etching the substrate to form a first trench and a second trench, wherein the first trench and the second trench expose the first etching stop feature and the second etching stop feature, respectively. The method further includes filling the first trench and the second trench with a dielectric material.

The present specification relates to an organic-inorganic hybrid solar cell.

Provided are a water decomposition apparatus and a water decomposition method that can maintain high gas generation efficiency even in an early stage of light irradiation and even in a case where time has elapsed and that can recover the gas generation amount of hydrogen gas or the like, can generate hydrogen gas or the like stably for a long time on an average, and can increase the integrated amount of generation of hydrogen for a long time, even in a case where time has elapsed and the gas generation amount of hydrogen gas or the like has decreased.

A photovoltaic module generates electrical power when installed on a roof. The module is constructed as a laminated sandwich having a transparent protective upper layer adhered to a photovoltaic layer. The photovoltaic layer is adhered to the top of a rigid layer, preferably formed from a fiber reinforced plastic. A tapered edge seal is disposed about the peripheral outer edge of the module, so that water and debris easily run off. Preferably, the tapered edge seal is disposed adjacent the photovoltaic layer, and above the rigid substrate layer. The tapered edge seal is thinner at the outer peripheral portion thereof than at a portion thereof adjacent the photovoltaic layer. The laminated module preferably has a layer of double sided tape on the bottom to adhere the module to the surface of a roof.

A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanoparticles contain silver nanoparticles of 75 weight % or more, the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a carbon backbone of carbon number of 1 to 3, and the metal nanoparticles contains 70% or more in number-average of metal nanoparticles having a primary grain size within a range of 10 to 50 nm.

The present invention relates to a glass material for sealing a large-area dye-sensitized solar cell and, more specifically, to a glass material which does not react with an electrolyte and allows uniform and high-strength binding even on a large area. According to the present invention, the glass material is expected to produce action effects of improving reliability and lifetime of solar cell products since it can uniformly seal a dye-sensitized solar cell, is chemically stable due to the absence of the reaction with an electrolyte, and has physical strength appropriate for large-area binding.

A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.