The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.

A sensor package includes an encapsulation body formed from a mold compound having a front side and a back side opposite the front side, an optical sensor die embedded within the encapsulation body on the front side such that an active surface of the optical sensor die is uncovered by the encapsulation body, and a conductive via that extends from the front side to the back side through the encapsulation body. The sensor package also includes a topside redistribution layer arranged on the front side, the topside redistribution layer electrically connecting the optical sensor die to the conductive via, a connection element arranged on the back side for electrically connecting the sensor package to an integrated circuit device, and a backside redistribution layer arranged on the back side. The backside redistribution layer electrically connects the connection element to the conductive via.

The present disclosure relates to a method for high pressure regulation and control of photoelectric detection based on BiOBr, and relates to the technical field of photoelectric detection. An exemplary method includes inserting an insulation layer into a pressure chamber of a diamond anvil cell and adding BiOBr, putting a pressure-calibrating substance on a culet of the diamond anvil cell; pressurizing the pressure chamber by rotating a press bolt on the diamond anvil cell; and conducting photoelectric detection using the pressurized BiOBr, where two platinum sheets are disposed on the BiOBr as an electrode. The present disclosure enhances the photo-response speed and photo-responsivity of photoelectric detection.

A method for preparing a solar cell includes providing a substrate with a first conducting layer, the substrate including a first surface and a second surface opposite to each other in a thickness direction of the substrate, the first conducting layer being formed on the first surface; forming a first electrode pattern on a side of the first conducting layer away from the substrate, the first electrode pattern being electrically connected to the first conducting layer, the first electrode pattern including a first soldering pattern, the first soldering pattern being configured for soldering to one or more first bus ribbons; forming a first dielectric layer on a side of the first electrode pattern away from the substrate, and covering the first electrode pattern with the first dielectric layer; and removing a portion of the first dielectric layer corresponding to the first soldering pattern, and exposing the first soldering pattern.

Embodiments of the present disclosure relate to a solar cell and a method for producing the same. The solar cell includes: a substrate having a first textured surface, a plurality of sheet-shaped anti-reflection films, and a plurality of grid lines. A plurality of grid-line areas spaced from each other are formed on the first textured surface, and each grid-line area has a second textured surface. One or more sheet-shaped anti-reflection films of the plurality of sheet-shaped anti-reflection films are formed on a portion of the second textured surface of each grid-line area. Each grid line of the plurality of grid lines is formed on a respective grid-line area, and each grid line is in contact with the one or more sheet-shaped anti-reflection films and with a remaining portion of the second textured surface of the respective grid-line area not covered by any sheet-shaped anti-reflection films. grid linegrid line.

Embodiments of the present disclosure relate to a solar cell and a method for producing the same. The solar cell includes: a substrate having a first textured surface, a plurality of sheet-shaped anti-reflection films, and a plurality of grid lines. A plurality of grid-line areas spaced from each other are formed on the first textured surface, and each grid-line area has a second textured surface. One or more sheet-shaped anti-reflection films of the plurality of sheet-shaped anti-reflection films are formed on a portion of the second textured surface of each grid-line area. Each grid line of the plurality of grid lines is formed on a respective grid-line area, and each grid line is in contact with the one or more sheet-shaped anti-reflection films and with a remaining portion of the second textured surface of the respective grid-line area not covered by any sheet-shaped anti-reflection films. grid linegrid line

A solar cell and a manufacturing method thereof, and a photovoltaic system. The solar cell includes: a substrate layer including a first surface and a second surface arranged oppositely along a thickness direction thereof; a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and a first finger electrode layer, at least one of the first fingers being arranged in first connection holes, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes. While ensuring good electrical connection, the solar cell causes less damage and recombination to a passivation structure of the solar cell, and has high photoelectric conversion efficiency.

A method for preparing a p-type gallium oxide film is provided. An M.sub.xGa.sub.1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain M.sub.xGa.sub.1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The M.sub.xGa.sub.1-xN clusters are oxidized by O.sub.2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The M.sub.xGa.sub.1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

Compositions of matter, downconversion layers including the compositions of matter, and devices including the compositions of matter are described. In an embodiment, the compositions of matter are downconversion materials configured to absorb a quantum of energy of a first energy and, in response, emit two or more quanta of energy of a second energy less than the first energy. Methods of making and depositing downconversion materials are also described. Downconversion precursor mixtures suitable for making downconversion materials and methods of making the same are also described.

In a method for manufacturing a solar cell panel according to an embodiment of the present invention, a step of forming an electrode comprises the steps of: forming a main electrode part on a conductive region; and forming a connection electrode part on the main electrode part by using a paste comprising metal particles having a first metal, a solder material having a second metal different from the first metal, and an adhesive material.