A quantum technological, micro-optical, micro-electronic or photonic system, includes a planar substrate, a microelectronic circuit which is part of the substrate; at least one electrical component comprised within the microelectronic circuit, a micro-optical subdevice which is part of the planar substrate, one or more nanoparticles being diamonds; and a colloidal film, wherein the one or more nanoparticles are comprised within the first portion of the colloidal film. The colloidal film includes the one or more nanoparticles. The system further comprises at least one light-emitting electro-optical component. The light-emitting electro-optical component interacts with the electrical component via the micro-optical subdevice. The one or more nanoparticles include two NV centers. The at least two NV centers interact with one another in a physically observable manner. The interaction between the light-emitting component and the electrical component takes place with involvement of the at least two NV centers.

A quantum technological, micro-optical, micro-electronic or photonic system, includes a planar substrate, a microelectronic circuit which is part of the substrate; at least one electrical component comprised within the microelectronic circuit, a micro-optical subdevice which is part of the planar substrate, one or more nanoparticles being diamonds; and a colloidal film, wherein the one or more nanoparticles are comprised within the first portion of the colloidal film. The colloidal film includes the one or more nanoparticles. The system further comprises at least one light-emitting electro-optical component. The light-emitting electro-optical component interacts with the electrical component via the micro-optical subdevice. The one or more nanoparticles include two NV centers. The at least two NV centers interact with one another in a physically observable manner. The interaction between the light-emitting component and the electrical component takes place with involvement of the at least two NV centers.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<k.sub.BT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

In one aspect, there is provided an apparatus including a light emitting diode. The apparatus may include a plurality of layers including a substrate layer, a buffer layer disposed on the substrate layer, a charge transport layer, a light emission layer, another charge transport layer, and/or a metamaterial layer. The other charge transport layer may have at least one channel etched into the other charge transport layer leaving a residual thickness of the other charge transport layer between a bottom of the etched channel and the light emission layer. A metamaterial layer may be contained in the at least one channel that is proximate to the residual thickness of the charge transport layer. The metamaterial may include a structure including at least one of a dielectric or a metal. The metamaterial may cause the light emitting diode to operate at higher frequencies and with higher efficiency.

A lighting device includes a DC/DC converter, a drive circuit, and a delay circuit. The drive circuit generates a feedback signal and a PWM signal. The feedback signal indicates whether or not a voltage required for a constant current to flow in a solid-state light emitting device is applied to the solid-state light emitting device. The PWM signal indicates a current supply period during which a current flows in the solid-state light emitting device. The delay circuit delays at least one of a start timing and an end timing of the current supply period with respect to the PWM signal. The DC/DC converter includes: a switching element, and a control circuit which performs control such that the switching element switches in accordance with the feedback signal generated by the drive circuit, during an on-duty period determined by the PWM signal the timing of which has been delayed by the delay circuit.

Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

An ultraviolet light emitting device without the use of a p-type semiconductor layer is described. For generating ultraviolet light, an electron beam generator is provided, and an electron beam generated in the electron beam generator is guided to an active layer of an ultraviolet light generator. In the active layer, the electron beam suffers collisions, and electron-hole pairs generated by the collisions are confined in well layers due to barrier layers of the active layer. The confined electrons and holes generate ultraviolet light through recombination.

An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer (210, 310, 410) disposed between a first electrode (212, 312, 412) and a layer (208, 308, 408) of the plurality of free standing quantum dots. A hole transport layer (206, 306, 406) is disposed between the layer (208, 308, 408) of the plurality of quantum dots and a second electrode (204, 304, 404). A light source (224, 324, 424) is disposed so as to apply light to the layer (208, 308, 408) of the plurality of free standing quantum dots. The photon output of the layer (208, 308, 408) of the plurality of free standing quantum dots is modulated by applying a voltage to the first and second electrodes (212, 312, 412, 204, 304, 404). Electrons excited to a higher energy state within layer (208, 308, 408) of the free standing quantum dots by the light source (224, 324, 424) are prevented from returning to a lower state by electrons from the electric field of the applied voltage, and therefore the free standing quantum dots are prevented from emitting a photon. The voltage source (216, 316, 416) may be modulated to vary the photon output.