The present application relates to a fabrication method for a double-sided capacitor. The fabrication method for the double-sided capacitor includes the following steps: providing a substrate; forming a stack structure on the substrate; forming a capacitor hole in a direction perpendicular to the substrate to penetrate the stack structure, wherein the stack structure includes sacrificial layers and supporting layers alternately stacked; forming an auxiliary layer to cover the sidewall of the capacitor hole; forming a first electrode layer to cover the surface of the auxiliary layer; removing a part of the supporting layer on the top of the stack structure; removing the sacrificial layers and the auxiliary layer simultaneously along the opening; and forming a dielectric layer covering the surface of the first electrode layer and a second electrode layer covering the surface of the dielectric layer, wherein the gap is at least filled with the dielectric layer.

A capacitance structure and a forming method thereof are provided, and the forming method includes: an annular gasket is formed on a substrate, and after a central through hole exposing a part of a surface of the substrate is formed in a center of the annular gasket, a first capacitance structure is formed in the central through hole; a dielectric layer covering the substrate, the annular gasket and the first capacitance structure is formed; the dielectric layer is etched to form an etching hole communicating with the central through hole in the dielectric layer; and a second capacitance structure connected to the first capacitance structure is formed in the etching hole.

A display device is provided. The display device comprises: a first electrode and a second electrode that are spaced from each other in a first direction; a plurality of light-emitting elements arranged between the first electrode and the second electrode; a pixel circuit including a capacitor that includes first to third capacitor electrodes stacked in order; an interlayer insulation layer arranged between the second capacitor electrode and the third capacitor electrode; a first area overlapping on the first capacitor electrode; and a second area that excludes the first area, wherein the interlayer insulation layer of the first area is thinner than the interlayer insulation layer in the second area.

A method of producing a semiconductor memory device includes following operations. A substrate is provided. A stacked structure is formed on the substrate. Capacitor holes arranged at intervals are formed in the stacked structure. Bottom electrode layers are formed in the capacitor holes. A top-layer dielectric layer is removed. A first capacitor dielectric layer is formed on exposed surfaces of a sacrificial layer and surfaces of upper parts of the bottom electrode layers. A first top electrode layer is formed on a surface of the first capacitor dielectric layer. Multiple openings are formed in the first top electrode layer and first capacitor dielectric layer. The sacrificial layer is removed through the openings. A second capacitor dielectric layer is formed. A second top electrode layer is formed on a surface of the second capacitor dielectric layer.

A method for forming a capacitor opening hole and a method for forming a memory capacitor are provided. The method for forming a capacitor opening hole includes: providing a substrate, and forming a sacrificial layer and a supporting layer, which are stacked, on the surface of the substrate (S100); forming multiple hollow first side wall structures, spaced apart, on the surface of the supporting layer (S200); forming a second material layer on the surface of the first side wall structure to constitute a second side wall structure (S300); and etching the sacrificial layer and the supporting layer by taking the first side wall structure and the second side wall structure as masks to form the capacitor opening hole (S400).

A double-sided capacitor structure and a method for forming the same are provided. The method includes: providing a base including a substrate, capacitor contacts in the substrate, a stacked structure on a surface of the substrate, and capacitor holes penetrating through the stacked structure and exposing the capacitor contacts, and the stacked structure includes sacrificial layers and supporting layers which are alternately stacked in a direction perpendicular to the substrate; forming a first electrode layer, a first dielectric layer and a second electrode layer on inner walls of the capacitor holes; filling the capacitor holes with a first conductive material to form a first conductive filling layer; completely removing several of the sacrificial layers and/or the supporting layers to remain at least two of the supporting layers; and forming a second dielectric layer and a third electrode layer that covers a surface of the second dielectric layer.

A functional contactor is provided. A functional contactor according to an exemplary embodiment of the present invention comprises; a clip-shaped conductor having elasticity which is in electrical contact with a conductor of an electronic device; a functional element which is electrically connected to the clip-shaped conductor in series via a solder and comprises a first electrode and a second electrode respectively provided on the entire upper and lower surfaces thereof; and an arrangement guide which is formed to surround at least a part of the clip-shaped conductor on the upper surface of the functional element so as to arrange the position of the clip-shaped conductor and is made of nonconductive resin.

A functional contactor is provided. Provided according to an exemplary embodiment of the present invention is a functional contactor comprising: a conductor which has elasticity and comes into contact with a conductor of an electronic device; a functional element which is connected to the conductor having elasticity and has a first and a second electrode respectively disposed on at least a part of an upper and a lower surface thereof; and a solder through which a lower surface of the conductor having elasticity is coupled with the first electrode of the functional element. The first electrode includes a first part outwardly extending from the lower surface of the conductor having elasticity along one side surface of the conductor having elasticity, and the solder includes an exposure part formed between the first part and a partial lateral surface of the one side surface of the conductor having elasticity.

The present disclosure provides a semiconductor device, and a capacitor device and its manufacture method, and relates to the field of semiconductor technologies. The manufacture method includes: forming, on a substrate, a plurality of storage node contact plugs distributed in an array and an insulation layer separating each of the storage node contact plugs; forming an electrode supporting structure on a side of the insulation layer away from the substrate, the electrode supporting structure having a plurality of through holes exposing each of the storage node contact plugs respectively, the through hole comprising a plurality of hole segments end-to-end jointing successively, the hole segment located on a side close to the substrate having an aperture greater than the hole segment located on a side away from the substrate; forming a dielectric layer; forming a second electrode layer.

Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.