A three-position control device includes a cylinder device, a fluid control unit, and a displacement restriction device. The cylinder device displaces a piston to each of a retracted position, an intermediate position, and an advanced position. The cylinder device has a first fluid chamber for retraction and a second fluid chamber for advance. A fluid control unit switches an advanced/retracted position of the piston. A second working pressure during displacement from an intermediate position to the advanced position is set to be greater than a first working pressure during displacement from the retracted position to the intermediate position. The displacement restriction device has a load receiving portion and a biasing means. A biasing force of the biasing means is set to be greater than a thrust caused by the first working pressure and smaller than a thrust caused by the second working pressure.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.

The disclosure provides a temperature compensation system, including a cavity, a temperature feedback module, a heating plate, a main heating module, a multi-zone temperature control module, a distributed temperature control module and at least one auxiliary temperature adjustment module, wherein at least one temperature control compensation area is arranged at a bottom surface of the heating plate, and the auxiliary temperature adjustment module and the temperature control compensation area are arranged in a correspondence manner; the temperature feedback module performs temperature detection on the heating plate to obtain a first temperature value and a second temperature value; the multi-zone temperature control module controls the main heating module to perform temperature adjustment on the heating plate according to the first temperature value, and the distributed temperature control module controls the auxiliary temperature adjustment module to perform temperature compensation adjustment on the temperature control compensation area according to the second temperature value. Complicated outgoing design is avoided, less volume space is occupied, the cost is reduced and the temperature control accuracy is high. The disclosure further provides a semiconductor device and a temperature compensation method.

Substrates are immersed in a treatment fluid stored in a treatment chamber, and subjected to a surface treatment. A first lid and a second lid cover an upper opening of the treatment chamber. The first lid and the second lid each include sloped surfaces. At least a part of the first lid and the second lid is immersed in the treatment fluid. During the treatment on the substrates, a plurality of bubble supply pipes eject bubbles into the treatment fluid. The sloped surfaces formed on the first lid and the second lid guide the bubbles reaching an interface between the treatment fluid, the first lid, and the second lid diagonally upward. Thus, the bubbles are smoothly released outside the treatment chamber. This can eliminate retention of the bubbles, avoid contacts between the bubbles and the substrates, and suppress a decrease in the treatment uniformity.

A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.

A warpage amount estimation apparatus that estimates a warpage amount of a substrate includes a processor and a memory. The processor acquires a captured image of one surface of an estimation target substrate. The processor calculates a rate of change in pixel value relating to a substrate radial direction in the captured image of the one surface of the estimation target substrate. The processor estimates a warpage amount of the estimation target substrate based on a correlation obtained in advance between a rate of change in pixel value relating to the substrate radial direction in a captured image of the one surface of a substrate and a warpage amount of the substrate, and on a calculation result of the rate of change which is calculated.

There is provided a technique that includes a processor configured to be capable of executing a process recipe to process a substrate; and a pressure controller configured to be capable of controlling a pressure of a process chamber, in which the substrate is processed, by adjusting an opening degree of a pressure regulating valve provided to an exhaust line of the process chamber, wherein when controlling the pressure of the process chamber, the pressure controller adjusts the opening degree of the pressure regulating valve and outputs information of the opening degree, and wherein while receiving the information of the opening degree from the pressure controller and monitoring an open/close state of the pressure regulating valve, the processor is configured to, when the information of the opening degree is a preset value, be capable of determining whether or not opening/closing of the pressure regulating valve happens.

Apparatus and methods for determining wafer characters are disclosed. In one example, an apparatus is disclosed. The apparatus includes: a processing tool configured to process a semiconductor wafer; a device configured to read an optical character disposed on the semiconductor wafer while the semiconductor wafer is located at the apparatus for wafer fabrication; and a controller configured to determine whether the optical character matches a predetermined character corresponding to the semiconductor wafer based on the optical character read in real-time at the apparatus.

A raw material feeding device includes: a raw material container that accommodates a solid or liquid raw material; an upstream path connected to the raw material container; a downstream path connected to the raw material container; a bypass path that connects the upstream path and the downstream path to each other without passing through the raw material container; a downstream side valve; a pressure gauge provided in at least one of the upstream path and the downstream path; and a remaining amount estimation unit that acquires a pressure detection value from the pressure gauge, and estimates a remaining amount of the raw material within the raw material container based on the pressure detection value decreased when the downstream side valve is opened at start of flowing of the raw material gas from the raw material container to the downstream path.

The invention provides a semiconductor processing machine, which comprises a plurality of chambers, at least one of the chamber is a load-lock chamber, and the load-lock chamber comprises a bottom surface and a top lid opposite to the bottom surface; and a gas pipeline is connected with the top lid of the load-lock chamber.