A pattern forming method including a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate; a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition; an exposure step of exposing the resist film; and a development step of developing the exposed resist film by using a developer, wherein the chemical liquid of the present invention contains a mixture of two or more kinds of designated organic solvents, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains a resin including at least one kind of repeating unit selected from the group consisting of a repeating unit represented by Formula (a), a repeating unit represented by Formula (b), a repeating unit represented by Formula (c), a repeating unit represented by Formula (d), and a repeating unit represented by Formula (e).

Metallization structure for an integrated circuit. In one embodiment, an integrated circuit includes a metal-to-diffusion (MD) layer disposed over an active region of a cell, gates disposed over the active region of the cell, and a first metallization layer including M0 tracks disposed over the MD layer and the gates. The integrated circuit further includes a second metallization layer including M1 tracks disposed over the first metallization layer. The M1 tracks include first M1 tracks each having a first predetermined distance from an edge of the cell and second M1 tracks each having a second predetermined distance from the edge of the cell, wherein the first M1 tracks are longer than the second M1 tracks.

A laser device includes an oscillator outputting pulse laser light; an amplifier amplifying the pulse laser light; an optical pulse stretcher extending a pulse width of the pulse laser light; a beam divergence angle adjuster including an upstream lens arranged on an optical path of the pulse laser light, a downstream lens arranged downstream of the upstream lens, and an optical path length changing mechanism for changing an inter-lens optical path length between the upstream lens and the downstream lens; and a processor controlling the beam divergence angle adjuster and obtaining a repetition frequency or a duty of the pulse laser light, and to change, when the repetition frequency or the duty changes by a preset threshold or more, the inter-lens optical path length so that the beam divergence angle of the extended pulse laser light becomes small in accordance with the repetition frequency or the duty after the change.

A display substrate includes: a base substrate, a plurality of sub-pixels arranged on the base substrate, a plurality of gate lines, and a plurality of first compensation gate patterns; the sub-pixel includes a sub-pixel driving circuit, and the sub-pixel driving circuit includes a compensation transistor; the compensation transistor includes a second compensation gate pattern, the first compensation gate pattern is located between a corresponding second compensation gate pattern and the base substrate, the first compensation gate pattern is coupled to a DC signal output terminal, and the second compensation gate pattern is coupled to a corresponding gate line; the compensation transistor includes a compensation active layer, the compensation active layer is located between the first compensation gate pattern and the second compensation gate pattern, and the compensation active layer includes a compensation channel portion.

A substrate processing method includes (a) providing a substrate including an underlying film and a metal-containing resist film in which a pattern is formed on the underlying film; (b) forming a metal-containing film on a surface of the metal-containing resist film; and (c) removing a residue of the metal-containing film together with at least a part of the metal-containing film.

Provided is a method of forming patterns for a semiconductor device, the method comprising: forming an etching target film on a substrate; and forming a photoresist pattern on the etching target film, wherein the photoresist pattern includes a first exposure pattern on the etching target film and a second exposure pattern on the first exposure pattern, wherein forming the photoresist pattern comprises: forming a first photoresist film on the etching target film; forming the first exposure pattern by removing at least a portion of the first photoresist film through a first exposure process; forming a second photoresist film on the first exposure pattern; and forming the second exposure pattern by removing at least a portion of the second photoresist film through a second exposure process, wherein the photoresist pattern has a thickness that decreases from a central portion to an edge portion thereof.

A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.

A linearly moving mechanism includes an internal moving body provided within a case body and configured to be moved in a linear direction, the internal moving body being configured to move an external moving body connected to a connection member protruded from the case body through an opening formed at the case body; a seal belt extending in the linear direction and provided within the case body to close the opening, a first surface side of both end portions of the seal belt in a widthwise direction thereof facing an edge portion of the opening while being spaced apart therefrom; and a deformation suppressing member provided to face a second surface side of the both end portions to suppress deformation of the seal belt, the seal belt being connected to the internal moving body to be moved along with a movement of the internal moving body.

A resist underlayer film-forming composition includes: a polymer; and a solvent, in which the polymer has, in a side chain, one or two or more polymerizable multiple bonds selected from the group consisting of a carbon-carbon double bond, a carbon-carbon triple bond, a carbon-nitrogen double bond, and a carbon-nitrogen triple bond.

The present invention relates to a method for manufacturing multi-pixel gas microsensors, wherein each multi-pixel gas microsensor comprises at least a first pixel group having a first sensing material and a second pixel group having a second sensing material different from the first material. The method comprises a first step of providing a wafer substrate and processing the wafer substrate for building a plurality of multi-pixel microsensors having first and second groups of pixels, a second step of selecting sensing materials for each of the groups of pixels, and a third step of activation of the first and the second pixel group by coating electrode pairs of the first and second pixel group with the corresponding sensing materials selected.