Patent classifications
H10W29/00
IC having electrically isolated warpage prevention structures
Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.
SEMICONDUCTOR METAL LAYER STRUCTURE OVER CELL REGION
Metallization structure for an integrated circuit. In one embodiment, an integrated circuit includes a metal-to-diffusion (MD) layer disposed over an active region of a cell, gates disposed over the active region of the cell, and a first metallization layer including M0 tracks disposed over the MD layer and the gates. The integrated circuit further includes a second metallization layer including M1 tracks disposed over the first metallization layer. The M1 tracks include first M1 tracks each having a first predetermined distance from an edge of the cell and second M1 tracks each having a second predetermined distance from the edge of the cell, wherein the first M1 tracks are longer than the second M1 tracks.
SEMICONDUCTOR PACKAGE STRUCTURE
Disclosed is a semiconductor package structure, which includes a first substrate, a second substrate, a processor module, a chip stack structure, and a signal adapter board. The processor module is arranged on a first plane of the first substrate and connected to the first substrate; the chip stack structure is arranged on the first plane of the first substrate and connected to the first substrate, and the first substrate is configured to transmit a first-type signal between the processor module and the chip stack structure; the signal adapter board is connected to the processor module and the chip stack structure, and is configured to transmit a second-type signal between the processor module and the chip stack structure; and the second substrate is arranged parallel to the first substrate and connected to a second plane of the first substrate, and the second plane of the first substrate is parallel to and opposite to the first plane of the first substrate.