A power module includes an upper substrate and a lower substrate, an upper chip, a lower chip, and a circuit board disposed across a space between the upper substrate and the lower chip and a space between the lower substrate and the upper chip so that the upper substrate and the lower substrate are vertically spaced from each other. The circuit board electrically connects the upper chip to the lower substrate while electrically connecting the lower chip to the upper substrate.

Disclosed herein is a method for manufacturing a semiconductor comprising mechanically connecting one or more separate semiconductor components to a common intermediate carrier, arranging the intermediate carrier with respect to a substrate so that, at least for a majority of the semiconductor components, at least one solder pad of a particular semiconductor component lies opposite a solder pad of the substrate associated therewith forming a solder joint, and connecting mutually associated solder pads of the one or more semiconductor components and the substrate by melting and solidifying a solder material arranged between the mutually associated solder pads. A surface tension of the solder material between the mutually associated solder pads of the substrate and the one or more semiconductor components sets a predetermined position of the intermediate carrier relative to the substrate, in which the one or more semiconductor components assume a target position relative to the substrate.

A light-emitting device and a display apparatus including the light-emitting device are provided. The light-emitting device includes a light-emitting cell including first and second electrodes arranged on an upper surface to be apart from each other, an extended layer in which the light-emitting cell is embedded and which has a width greater than a width of the light-emitting cell, and first and second electrode pads arranged on an upper surface of the extended layer to be apart from each other and respectively electrically connected to the first and second electrode.

A display device includes: a power source line; a plurality of gate lines each extending in a first direction and arranged along a second direction in a plan view; a plurality of pixels connected to the power source line and the gate lines; and a plurality of vertical lines each extending in the second direction and arranged along the first direction in the plan view, wherein the vertical lines include a plurality of gate connection lines and a plurality of dummy lines between the gate connection lines, wherein the gate connection lines connect the gate lines to a gate driver, wherein the dummy lines are connected to the power source line, and wherein a distance between the dummy lines spaced apart from each other with at least one of the gate connection lines interposed therebetween is constant throughout.

A method of forming a monolithic LED precursor is provided. The method comprises: providing a substrate having a top surface; forming a first semiconductor layer comprising a Group III-nitride on the top surface of the substrate; selectively masking the first semiconductor layer with a LED mask layer, the LED mask layer comprising an aperture defining a LED well through a thickness of the LED mask layer to an unmasked portion of the first semiconductor layer, the LED well comprising LED well sidewalls extending from a top surface of the first semiconductor layer to a top surface of the LED mask layer; and selectively forming a monolithic LED stack within the LED well on the unmasked portion of the first semiconductor layer. The monolithic LED stack comprises a n-type semiconductor layer comprising a Group III-nitride formed on the first semiconductor layer, an active layer formed on the first semiconductor layer comprising one or more quantum well sub-layers, the active layer comprising a Group III-nitride, and a p-type semiconductor layer comprising a Group III-nitride formed on the second semiconductor layer. The LED stack sidewalls of the monolithic LED stack extend from the top surface of the first semiconductor layer conform to the LED well sidewalls of the LED mask layer.

Devices and methods for forming a chip package structure including a package substrate, a first adhesive layer attached to a top surface of the package substrate, and a beveled stiffener structure attached to the package substrate. The beveled stiffener structure may include a bottom portion including a tapered top surface, in which a bottom surface of the bottom portion is in contact with the first adhesive layer, a second adhesive layer attached to the tapered top surface, and a top portion including a tapered bottom surface, in which the tapered bottom surface is in contact with the second adhesive layer. The tapered top surface and the tapered bottom surface have a taper angle between 5 degrees and 60 degrees with respect to a top surface of the package substrate.

A display device includes a substrate, a first and second bank patterns disposed on a substrate, a gate insulating layer overlapping the first bank pattern, a first transistor including a first and second electrodes disposed on the substrate with the first bank pattern interposed therebetween in a thickness direction, a first semiconductor pattern connected to the first electrode and the second electrode and disposed on a side surface of the first bank pattern, and a first gate electrode disposed to correspond to the first semiconductor pattern with the first semiconductor pattern and the gate insulating layer interposed therebetween, a light emitting element connected to the first transistor and having a first end part and a second end part, a first pixel electrode that contacts the first end part of the light emitting element, and a second pixel electrode that contacts the second end part of the light emitting element.

A package structure includes a circuit substrate, a semiconductor package, a lid structure, a passive device and a barrier structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package. The lid structure is attached to the circuit substrate through an adhesive material. The passive device is disposed on the circuit substrate in between the semiconductor package and the lid structure. The barrier structure is separating the passive device from the lid structure and the adhesive material, and the barrier structure is in contact with the adhesive material.

The disclosed device includes a bottom die layer comprising a bottom die and a top die layer positioned on the bottom die layer and comprising a plurality of top dies and at least one gap between two of the plurality of top dies. The device also includes a cover encapsulating the bottom die layer and the top die layer and comprising an inlet and an outlet for a fluid channel, wherein the fluid channel includes the at least one gap. Various other methods, systems, and computer-readable media are also disclosed.

An electronic system and associated methods are disclosed. In one example, the electronic system includes a processor package including at least one processor integrated circuit (IC); an interposer including electrically conductive interposer interconnect; a first liquid metal well array including multiple liquid metal wells arranged between the processor package and the interposer, wherein the first liquid metal well array is attached to a surface of the processor package and attached to a first surface of the interposer and the interposer interconnect; a printed circuit board (PCB) attached to a second surface of the interposer and the interposer interconnect; a second liquid metal well array including a first surface attached to the first surface of the interposer and the interposer interconnect; and a first companion component package attached to a second surface of the second liquid metal well array.