A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.

A method comprises: covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material; and forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.

A method includes forming a first layer over a second layer; performing a laser treatment process on the first layer, wherein the laser treatment process includes directing a laser beam into the first layer, wherein the laser beam modifies the first layer; and after performing the laser treatment process on the first layer, performing a planarization process on the first layer to remove the first layer, wherein the planarization process exposes the second layer.