Patent classifications
C23C4/137
Method and device for manufacturing semiconductor substrate
This disclosure provides a method and a device for manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate comprises the following steps: heating a semiconductor material to a molten state to obtain a molten semiconductor material; thermally spraying the molten semiconductor material onto a baseplate by using a thermal spraying gun, then cooling to solidify the molten semiconductor material on the baseplate to obtain the semiconductor substrate. The disclosed method offers, when manufacturing the semiconductor substrate, high material utilization, low manufacturing cost, and the ability to manufacture larger semiconductor substrate, with controllable thickness and high purity, providing broad application prospects.
Method and device for manufacturing semiconductor substrate
This disclosure provides a method and a device for manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate comprises the following steps: heating a semiconductor material to a molten state to obtain a molten semiconductor material; thermally spraying the molten semiconductor material onto a baseplate by using a thermal spraying gun, then cooling to solidify the molten semiconductor material on the baseplate to obtain the semiconductor substrate. The disclosed method offers, when manufacturing the semiconductor substrate, high material utilization, low manufacturing cost, and the ability to manufacture larger semiconductor substrate, with controllable thickness and high purity, providing broad application prospects.
METHOD FOR REPAIRING MONOCRYSTALLINE MATERIALS
A method for coating, with a coating material, a monocrystalline substrate surface of a component comprising a monocrystalline alloy includes polishing the monocrystalline substrate surface, transferring the substrate to a vacuum chamber, and heating the entire substrate to a temperature of at least half a melting temperature of the substrate but less than a melting temperature of the substrate. The method further includes applying the coating material in powder form onto the polished monocrystalline substrate surface by vacuum plasma spraying. The powder has a mean particle size in a range of 10 to 200 m. A pressure in a range of 1 to 200 mbar is set for the vacuum plasma spraying, and an argon atmosphere having a hydrogen content in a range of 10 to 50 vol. % is used as a working gas for the vacuum plasma spraying.
METHOD FOR REPAIRING MONOCRYSTALLINE MATERIALS
A method for coating, with a coating material, a monocrystalline substrate surface of a component comprising a monocrystalline alloy includes polishing the monocrystalline substrate surface, transferring the substrate to a vacuum chamber, and heating the entire substrate to a temperature of at least half a melting temperature of the substrate but less than a melting temperature of the substrate. The method further includes applying the coating material in powder form onto the polished monocrystalline substrate surface by vacuum plasma spraying. The powder has a mean particle size in a range of 10 to 200 m. A pressure in a range of 1 to 200 mbar is set for the vacuum plasma spraying, and an argon atmosphere having a hydrogen content in a range of 10 to 50 vol. % is used as a working gas for the vacuum plasma spraying.
PLASMA SPRAY PHYSICAL VAPOR DEPOSITION WITHIN INTERNAL CAVITY
In some examples, a plasma spray physical vapor deposition system includes a vacuum pump; a vacuum chamber; a coating material source; a plasma spray device configured to generate a plasma plume including vaporized coating material; and a funnel. The funnel has an inlet opening and an outlet opening smaller than the inlet opening. The funnel is configured and positioned to receive the plasma plume through the inlet opening and direct the plasma plume out of the outlet opening.
FORMING METHOD OF YTTRIUM OXIDE FLUORIDE COATING FILM AND YTTRIUM OXIDE FLUORIDE COATING FILM PREPARED THEREBY
A forming method of an yttrium oxide fluoride (YOF) coating film and a (YOF) coating film formed thereby are disclosed. The YOF coating film has no or extremely small pores therein and a nanostructure to increase light transmittance thereof, and has high hardness and high bonding strength and thus can protect a transparent window of a display device. The method for forming an YOF coating film involves the steps of: providing pretreated YOF powder having a particle diameter ranging from 0.1 to 12 m; receiving a transfer gas supplied from a transfer gas supply unit and receiving the pretreated YOF powder supplied from a powder supply unit to transfer the pretreated YOF powder in an aerosol state; and colliding/smashing (spraying) the pretreated YOF powder transferred in the aerosol state with/onto a substrate in a process chamber to form an YOF coating film on the substrate.
PLASMA SPRAY APPARATUS AND METHOD
Plasma spray apparatus for coating substrates, including at least a working chamber including a plasma torch and at least a substrate support, in which an inert gas or a mixture of inert gases is contained at a pressure which is close to the normal pressure, and at least a gas circuit, in communication with said working chamber, including recirculating means of the inert gases contained in said working chamber. The recirculating means include a closed loop, including a blower and a first heat exchanger communicating with said working chamber for extracting the inert gases and supplying a first fraction of the cooled inert gases back into a first portion of the working chamber, and at least a path, communicating with said closed loop and including a compressor and a second heat exchanger for supplying a second fraction of the cooled inert gases into a second portion of the working chamber.
PLASMA SPRAY APPARATUS AND METHOD
Plasma spray apparatus for coating substrates, including at least a working chamber including a plasma torch and at least a substrate support, in which an inert gas or a mixture of inert gases is contained at a pressure which is close to the normal pressure, and at least a gas circuit, in communication with said working chamber, including recirculating means of the inert gases contained in said working chamber. The recirculating means include a closed loop, including a blower and a first heat exchanger communicating with said working chamber for extracting the inert gases and supplying a first fraction of the cooled inert gases back into a first portion of the working chamber, and at least a path, communicating with said closed loop and including a compressor and a second heat exchanger for supplying a second fraction of the cooled inert gases into a second portion of the working chamber.
Powder coating apparatus
A powder coating apparatus for attaching powder to a film includes a forwarding roll which forwards the film; a take-up roll which is arranged on the downstream side of a conveyance direction of the film with respect to the forwarding roll and which takes up the film; a film-forming nozzle which is arranged between the forwarding roll and the take-up roll in the conveyance direction so as to be opposed to the film and which jets the powder; a first casing or a second casing which accommodates the forwarding roll and the take-up roll; an apparatus casing which accommodates the film-forming nozzle, the first casing, and the second casing; and a pressure adjustment unit configured to set an internal pressure of the first casing and the second casing to be higher than an internal pressure of the apparatus casing.
Powder coating apparatus
A powder coating apparatus for attaching powder to a film includes a forwarding roll which forwards the film; a take-up roll which is arranged on the downstream side of a conveyance direction of the film with respect to the forwarding roll and which takes up the film; a film-forming nozzle which is arranged between the forwarding roll and the take-up roll in the conveyance direction so as to be opposed to the film and which jets the powder; a first casing or a second casing which accommodates the forwarding roll and the take-up roll; an apparatus casing which accommodates the film-forming nozzle, the first casing, and the second casing; and a pressure adjustment unit configured to set an internal pressure of the first casing and the second casing to be higher than an internal pressure of the apparatus casing.