An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

Certain example embodiments relate to techniques for improving the uniformity of, and/or conformance to a desired pattern for, metal island layers (MILs) formed on a substrate (e.g., a glass or other substrate), and/or associated products. Certain example embodiments form MILs using a laser or other energy source or magnetic field assisted technique, e.g., to compensate for non-uniformities that otherwise likely would result in the MIL diverging from its desired configuration. For example, a laser or other energy source may introduce heat onto a substrate, enable pulsed laser deposition, raster a target including the MIL metal to be deposited, raster a substrate where the MIL is to be formed, etc. These and/or other techniques may be used to enable the MIL to be formed on the substrate in a desired pattern, e.g., by compensating for implicit non-uniformities of the substrate and/or by selectively creating non-uniformities in how the MIL is formed.

Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

A method for manufacturing grating reference materials having a self-traceability includes: acquiring a mask substrate including a window region and a non-window region; fabricating, a self-traceability mask on the mask substrate by using a laser-focused atomic deposition technique; acquiring a photoresist sample including an extreme ultraviolet photoresist and a second substrate; exposing the extreme ultraviolet photoresist by combining the self-traceability mask with the soft x-ray interference lithography, and then performing a development process after exposing to obtain a photoresist grating structure; and transferring the photoresist grating structure to the second substrate to obtain the grating reference materials.

The present invention relates to a method and device capable to form a nanomaterial structure (13) on a receiver (14) by transfer of nanomaterial from a donor film. In some embodiment, the transfer can be provided by laser induced forward transfer, more preferably by blister based laser induced forward transfer. The method further comprises a simultaneous scanning of the donor film (12) or the receiver (14) so that, a computer driven means for moving the receiver (14) and the donor film (12) can form high precision nanomaterial structure (13). In a preferred embodiment, the simultaneous scanning can be provided by an imaging laser generating high harmonic waves which are detected by a detector. In yet another embodiment, the receiver (14) and/or donor film (12) can be further scanned by a broadband light source(s). In a preferred embodiment, imaging laser and/or light source(s) are emitting polarized light to determine orientation of the nanoparticle deposited on the receiver (14) and forming the nanomaterial structure (13).

Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

A display panel, an evaporation method of a luminous material, and an equipment are provided. The method is performed by providing an electric field covering an array substrate, and generating luminous material charged particles. After the luminous material charged particles passing through the mask, they will change a direction of motion under an action of the electric field, and move perpendicularly to a pixel area of the array substrate along a direction of the electric field, and then uniformly deposit on the pixel area of the array substrate, which ensures that a uniformity of film formation of the luminous material.

A method for laser-processing a metallic surface to produce a functionalized metallic surface comprises: providing a substrate having the metallic surface; applying a pulsed laser beam with a controlled fluence to a region of the metallic surface in an environment containing oxygen, wherein metal material in the region of the metallic surface ablates due to the applied pulsed laser beam and wherein at least a portion of the ablated metal material oxidizes and redeposits on the metallic surface to produce one or more oxidized-metal-coated structures; wherein the metallic surface having the one or more oxidized-metal-coated structures is the functionalized metallic surface. Optionally, the functionalized metallic surface has a higher hemispherical emissivity than the metallic surface free of the oxidized-metal-coated structures and prior to applying the pulsed laser beam under otherwise identical conditions. Optionally, the functionalized metallic surface is characterized by a hemispherical emissivity of at least 0.85.