C23C14/0605

EXTERIOR MATERIAL FOR COOKING APPLIANCE AND MANUFACTURING METHOD THEREOF

An exterior material for cooking appliance capable of improving durability, heat resistance, scratch resistance, and cleaning performance by forming a Silicon-Diamond like carbon (SiDLC) coating layer including silicon (Si) under a high-temperature environment, and a method for manufacturing the exterior material. The exterior material includes: a base material; and a SiDLC coating layer provided on the base material, wherein the SiDLC coating layer includes Si of about 1 weight % to 50 weight %, carbon (C), and other inevitable impurities.

EXTERIOR MATERIAL FOR COOKING APPLIANCE AND MANUFACTURING METHOD THEREOF

An exterior material for cooking appliance capable of improving visibility, Vickers hardness, and scratch resistance by forming laser holes in a surface of an exterior material including a Diamond like carbon (DLC) coating layer, and a method for manufacturing the exterior material. The cooking appliance exterior material includes a base material, a Diamond like carbon (DLC) coating layer provided on the base material, an adhesive layer provided between the base material and the DLC coating layer to attach the DLS coating layer to the base material to incase an adhesion force between the base material and the DLC coating layer, and a plurality of laser holes provided in a surface of the exterior material.

PISTON RING AND METHOD FOR MANUFACTURING SAME
20230127883 · 2023-04-27 ·

A method for manufacturing a piston ring includes the following steps: (A) a step of supplying an arc current to a cathode formed of a carbon material having a density of 1.70 g/cm.sup.3 or more, to ionize the carbon material; and (B) a step of applying a bias voltage in an environment where hydrogen atoms are substantially absent to form a DLC film on a surface of a base material for a piston ring.

The step (A) is continuously carried out, subsequently the step (A) is interrupted, and then the step (A) is restarted, which sequence is repeated thereby to form the DLC film having an extinction coefficient of 0.1 to 0.4 as measured using light having a wavelength of 550 nm and a nanoindentation hardness of 16 to 26 GPa.

Containers and methods for improved mechanical strength
11472590 · 2022-10-18 · ·

Containers are provided that include a body structure having a top end that defines an opening, a sealed base end, and a sidewall structure extending between the top and base ends, in which the sidewall structure has an interior surface and an exterior surface, the interior surface defining an interior space, and a protective coating that includes a diamond-like carbon on at least a portion of the exterior surface of the sidewall structure. Methods for enhancing the mechanical strength of containers are also provided.

SHUTTER DISK FOR PHYSICAL VAPOR DEPOSITION (PVD) CHAMBER

Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a non-sputtering shutter disk on a substrate support of the PVD chamber; energizing an oxygen-containing cleaning gas disposed in the inner volume of the PVD chamber to create a plasma reactive with carbon-based materials; and heating the process kit having a carbon-based material adhered thereto while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.

Vacuum process apparatus and vacuum process method

A vacuum process method for a magnetic recording medium having a surface protective layer for protecting a magnetic recording layer formed on a substrate includes a ta-C film forming step of forming a ta-C film on the magnetic recording layer, a transportation step of transporting a substrate on which the ta-C film is formed, a radical generation step of generating radicals by exciting a process gas, and a radical process step of irradiating a surface of the ta-C film with the radicals.

Anti-corrosion conductive film and pulse bias alternation-based magnetron sputtering deposition method and application thereof

The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

Method for particle removal from wafers through plasma modification in pulsed PVD

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

CUTTING TOOL

Provided is a cutting tool comprising a base body and a hard carbon film arranged on the base body, in which, when the cross section of the hard carbon film is observed using a high angle annular dark field scanning transmission electron microscope, the area proportion of black regions with an equivalent circle diameter of 10 nm or more is 0.7% or less, and the hard carbon film has a hydrogen content of 5 atom% or less.

CUTTING TOOL

Provided is a cutting tool comprising a base body and a hard carbon film arranged on the base body, in which the hard carbon film includes an amorphous phase and a graphite phase, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the degree of orientation of the graphite phase is no more than 6.