Provided is a radio wave transmittable laminate, which includes a substrate; a primer coating layer located on an upper surface of the substrate and including a polymer resin; a metal layer located on an upper surface of the primer coating layer and made of a metal; a plurality of micro cracks formed in the metal layer so as to transmit radio waves; and a hole pattern constituted by a plurality of holes which vertically penetrate the metal layer so as to transmit the radio waves.

An alloy of Ge.sub.xSb.sub.ySe.sub.zTe.sub.m includes atoms of Ge, Sb, Se, and Te that form a crystalline structure having a plurality of vacancies randomly distributed in the crystalline structure. The alloy can be used to construct an optical device including a first waveguide to guide a light beam and a modulation layer disposed on the first waveguide. The modulation includes the alloy of Ge.sub.xSb.sub.ySe.sub.zTe.sub.m which has a first refractive index n.sub.1 in an amorphous state and a second refractive index n.sub.2, greater than the first refractive index by at least 1, in a crystalline state. The first waveguide and the modulation layer are configured to guide about 1% to about 50% of the light beam in the modulation layer when the alloy is in the amorphous state and guide no optical mode when the alloy is in the crystalline state.

A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

A method of manufacturing a solar cell including depositing a first electrode over a substrate under vacuum, depositing at least one p-type semiconductor absorber layer over the first electrode without breaking the vacuum, where the p-type semiconductor absorber layer comprises a copper indium selenide (CIS) based alloy material, sputter depositing an n-type semiconductor layer over the at least one p-type semiconductor absorber layer to form zinc oxysulfide in the n-type semiconductor layer without breaking the vacuum, and depositing a second electrode over the n-type semiconductor layer without breaking the vacuum.

An optical device as described herein includes a host substrate fabricated from a dielectric material transparent in the Infrared range. Additionally, the optical device as discussed herein includes multiple elements disposed on the host substrate. The multiple elements are spaced apart from each other on the host substrate in accordance with a desired pattern. Each of the multiple elements disposed in the host substrate is fabricated from a second material having a refractive index of greater than 4.5. Such an optical device provides an improvement over conventional optical devices that operate in the Infrared range.

A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an AlTeCuZr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

An SbTe-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of SbTe-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the SbTe-based alloy particles is 3 m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 m or less and a standard deviation thereof is less than 0.20. When the average grain size of the SbTe-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved SbTe-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

A sputter deposition system and method, the system including a process module containing a vacuum enclosure configured to receive a moving substrate, a first sputtering target disposed in the vacuum enclosure and including a target material, and a shield disposed between the first sputtering target and the substrate, the shield having upper and lower edges. At least a portion of each of the upper and lower edges is not parallel to a movement direction of the substrate past the first sputtering target.