C23C14/0641

INTERPOSER, SEMICONDUCTOR PACKAGE, AND METHOD OF FABRICATING INTERPOSER
20170330767 · 2017-11-16 ·

A method of fabricating an interposer includes: providing a carrier substrate; forming a unit redistribution layer on the carrier substrate, the unit redistribution layer including a conductive via plug and a conductive redistribution line; and removing the carrier substrate from the unit redistribution layer. The formation of the unit redistribution layer includes: forming a first photosensitive pattern layer including a first via hole pattern; forming a second photosensitive pattern layer including a second via hole pattern and a redistribution pattern on the first photosensitive pattern layer; at least partially filling insides of the first via hole pattern, the second via hole pattern, and the redistribution pattern with a conductive material; and performing planarization to make a top surface of the unit redistribution layer flat. According to the method, no undercut occurs under a conductive structure and there are no bubbles between adjacent conductive structures, thus device reliability is enhanced and pattern accuracy is realized.

Element comprising at least one sliding surface having a coating for use in an internal combustion engine or a compressor

An element with at least one slide surface with a coating for use on an internal combustion engine may include a base of a metallic alloy and at least one inner surface provided with a hard ceramic coating generated by physical vapor deposition. The element may include a porosity with a rate lower than 2 percent by volume, a Vickers hardness ranging from 1500 to 3000HV, and a compressive inner tension lower than 500 MPa.

Method of, and apparatus for, forming hard mask
09779958 · 2017-10-03 · ·

A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature.

ANTIMICROBIAL GLASS COATING
20170231229 · 2017-08-17 ·

The invention relates to an object having a coating arranged on at least one surface of the object, which comprises at least one antimicrobially active layer having an antimicrobial agent, wherein the agent comprises a copper (I) compound and/or a copper (II) compound.

CATHODIC ARC SOURCE

A cathodic arc evaporation apparatus including a target which has a target surface including an active surface from where material can be evaporated in a cathodic arc process; a confinement surrounding an outer boarder of the target surface; an anode having an electron receiving surface, the anode encompassing at least one of the target and the confinement in at least one of a target plane and an axial distance in front of the active surface; and a magnetic guidance system adapted to provide a magnetic field at the target surface being essentially in parallel to at least an outer region of the target surface so that magnetic field lines are in parallel to the target surface or inclined to it in an acute angle α, whereat an active surface is defined in a surface area where magnetic field lines enter the target surface in an acute angle α≤45°.

MULTI-LAYER COATING
20220307123 · 2022-09-29 ·

The invention relates to a method for coating a substrate 40, a coating system for carrying out the method, and a coated body. In a first method step 62, the substrate 40 is to pretreated in a ion etching process. In a second method step 64, a first coating layer 56a with a thickness of 0.1 μm to 6 μm is deposited on the substrate 40 by means of a PVD process. In order to achieve a particularly high-quality and durable coating 50, the surface of the first coating layer 56a is treated by means of an ion etching process in a third method step 66, and an additional coating layer 56b with a thickness of 0.1 μm to 6 μm is deposited on the first coating layer 56a by means of a PVD process in a fourth method step 68. The coated body comprises at least two coating layers 56a, 56b, 56c, 56d with a thickness of 0.1 μm to 6 μm on a substrate 40, wherein an interface region formed by ion etching is arranged between the coating layers 56a, 56b, 56c, 56d.

Film coatings as electrically conductive pathways
11426091 · 2022-08-30 · ·

This disclosure describes a portable electronic device that includes a first housing component having an exterior-facing surface and an interior-facing surface; and a second housing component cooperating with the first housing component to define an interior volume. A seal fills an interface between the first and second housing components. Electrically conductive material that forms an electrically conductive pathway extends across portions of the interior and exterior-facing surfaces of the first housing component. The electrically conductive pathway is configured to transmit and/or receive signals or power between an exterior and interior of the portable electronic device.

Piezoelectric thin film and method for producing the same

A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

Gate structure with refractory metal barrier

Gate structures for semiconductor devices include a silicon nitride layer, an electron beam evaporated tantalum nitride layer disposed on the silicon nitride layer, a first electron beam evaporated titanium layer disposed on the tantalum nitride layer, an electron beam evaporated gold layer deposited on the first titanium layer, and a second electron beam evaporated titanium layer deposited on the gold layer.

Cutting tool

A cutting tool comprises a rake face and a flank face, the cutting tool being composed of a substrate made of a cubic boron nitride sintered material and a coating provided on the substrate, the coating including a MAlN layer, the MAlN layer including crystal grains of M.sub.xAl.sub.1-xN in the cubic crystal system, n.sub.F<n.sub.R being satisfied, where n.sub.F represents a number of voids per 100 μm in length of the MAlN layer on the flank face in a cross section of the MAlN layer, and n.sub.R represents a number of voids per 100 μm in length of the MAlN layer on the rake face in a cross section of the MAlN layer, n.sub.D being 3 or less, where n.sub.D represents a number of droplets per 100 μm in length of the MAlN layer on the flank face in a cross section of the MAlN layer.