The present invention describes a hybrid multilayer solar selective coating having high thermal stability useful for high temperature solar thermal power generation. The hybrid multilayer solar selective coating of the present invention has been deposited using a novel combination of sputtering and sol-gel methods on metallic and non-metallic substrates, preferably on SS 304 and 321 with chrome interlayer. The hybrid multilayer solar selective coating of the present invention consists of stacks of Ti/chrome interlayer, aluminum titanium nitride (AlTiN), aluminum titanium oxynitride (AlTiON), aluminum titanium oxide (AlTiO) and organically modified silica (ormosil) layers. The chrome interlayer was deposited using an electroplating method, whereas, Ti, AlTiN, AlTiON and AlTiO layers were prepared using a four-cathode reactive unbalanced pulsed direct current magnetron sputtering technique. The ormosil layer was deposited using a sol-gel technique, which provides the enhanced absorptance and improved long term thermal stability in air and vacuum. The present invention provides a hybrid multilayer solar selective coating having absorptance >0.950, emittance <0.11 (SS substrate with chrome interlayer) and long term high thermal stability (in the order of 1000 hrs under cyclic heating conditions at 500° C. in air and 600° C. in vacuum). The hybrid multilayer solar selective coating of the present invention exhibits higher solar selectivity ratio in the order of 5-9 on metal and non-metal substrates. The hybrid multilayer solar selective absorber coating of the present invention has high oxidation resistance, stable microstructure, high adherence and graded composition particularly suitable for applications in concentrating collectors like evacuated receiver tubes and Fresnel receiver tubes useful for solar steam generation.

An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.

A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.

An electrical storage system is provided that has a thickness of less than 2 mm, where the system includes at least one sheet-type discrete element, the sheet-type discrete element exhibiting high resistance to an attack of alkali metals or alkali metal ions, in particular lithium, wherein the sheet-type discrete element has a low content of TiO.sub.2, the TiO.sub.2 content preferably being less than 2 wt %, preferably less than 0.5 wt %, and preferably free of TiO.sub.2.

A fluorine plasma resistant coating on a substrate being a component in a semiconductor manufacturing system is disclosed. In one embodiment the composition includes an AlON coating that overlies a substrate, and an optional yttria coating layer that overlies the AlON coating, with a total coating thickness of about 5-6 microns.

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm.Math.cm, preferably below 100 ohm.Math.cm, more preferably below 10 ohm.Math.cm, even lower than 1 ohm.Math.cm.

Coated substrate comprising a surface coated with a coating comprising at least one coating layer of (TM.sub.1-xAl.sub.x)O.sub.yN, with (0.75-y)≤z≤(1.2-y) and 0.6>y>0, exhibiting a solid solution with B1 cubic structure, wherein x is the content of aluminum in atomic fraction if only aluminum and TM are being considered for the determination of the element composition in atomic percentage, and y is the content of oxygen in atomic fraction if only 0 and N are being considered for the determination of the element composition in atomic percentage, wherein TM is one or more transition metals and 0.05<x<0.95, wherein y correspond to a value of oxygen concentration in the TM.sub.1-xAl.sub.xO.sub.yN.sub.z coating layer that produces an increment of the thermal stability in such a manner that no precipitation w-AlN phase is produced when the coated substrate or at least the coated surface of the coated substrate is exposed to temperatures higher than 1100° C.

The invention provides an evaporator that is heated by an electron beam in vacuum, evaporates or sublimates a vapor-deposition material, and forms a lithium-containing compound coating on a surface of a substrate in transfer by codeposition. The evaporator includes a hearth liner that includes a cooler; and a plurality of liners that are accommodated in the hearth liner, each of which has the vapor-deposition material thereinside.

A fluid distributor comprises a first conduit extending along a first elongated axis and a second conduit circumscribing the first conduit. A first area comprises a cross-sectional flow area of the first conduit taken perpendicular to the first elongated axis. The first conduit comprises a first plurality of orifices comprising a first combined cross-sectional area. The second conduit comprises a second plurality of orifices comprising a second combined cross-sectional area. A first ratio of the first area to the first combined cross-sectional area can be about 2 or more. A second ratio of the first combined cross-sectional area to the second combined cross-sectional area can be about 2 or more. An angle between a direction of an orifice axis of a first orifice of the first plurality of orifices and a direction of an orifice axis of a first orifice of the second plurality of orifices can be from about 45° to 180°.

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm.Math.cm, preferably below 100 ohm.Math.cm, more preferably below 10 ohm.Math.cm, even lower than 1 ohm.Math.cm.