The present invention relates to a solar selective coating for a metal substrate comprising at least one absorber layer and at least one semi-absorber layer selected from the structures of AlTiN and AlTiSiN. In preferred embodiments, the solar selective coating according to the present invention is a double layer coating with AlTiN-AlTiN or AlTiSiN-AlTiSiN formation. The process for producing the coating includes a step of treatment of the metal substrate with a reactive magnetron sputtering system.

Methods for forming low resistivity metal silicide interconnects using one or a combination of a physical vapor deposition (PVD) process and an anneal process are described herein. In one embodiment, a method of forming a plurality of wire interconnects includes flowing a sputtering gas into a processing volume of a processing chamber, applying a power to a target disposed in the processing volume, forming a plasma in a region proximate to the sputtering surface of the target, and depositing the metal and silicon layer on the surface of the substrate. Herein, the first target comprises a metal silicon alloy and a sputtering surface thereof is angled with respect to a surface of the substrate at between about 10 and about 50.

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi.sub.2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSi.sub.x with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 m.sup.2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

Provided is a coloring pattern structure. The coloring pattern structure includes: a substrate; a light-transmitting dielectric layer formed on at least one surface of the substrate; and a composite material layer disposed on an upper surface of the light-transmitting dielectric layer and formed of a metal and a first material not having a thermodynamic solid solubility in the metal, wherein the metal included in the composite material layer has a pattern coated only on portions of the upper surface of the light-transmitting dielectric layer, and the first material is coated on the remaining area where the metal is not coated.

In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and contains tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio specifying that the concentration of tungsten is 35 at % and the concentration of silicon is 65 at % and a ratio specifying that the concentration of tungsten is 50 at % and the concentration of silicon is 50 at %.

A method of fabricating a cobalt silicide layer includes providing a substrate disposed in a chamber. A deposition process is performed to form a cobalt layer covering the substrate. The deposition process is performed when the temperature of the substrate is between 50 C. and 100 C., and the temperature of the chamber is between 300 C. and 350 C. After the deposition process, an annealing process is performed to transform the cobalt layer into a cobalt silicide layer. The annealing process is performed when the substrate is between 300 C. and 350 C., and the duration of the annealing process is between 50 seconds and 60 seconds.

The invention relates to SiC ceramic matrix composite (CMC) claddings with metallic, ceramic and/or multilayer coatings applied on the outer surface for improved corrosion resistance and hermeticity protection. The coating includes one or more materials selected from FeCrAl, Y, Zr and AlCr alloys, Cr.sub.2O.sub.3, ZrO.sub.2 and other oxides, chromium carbides, CrN, Zr- and Y-silicates and silicides. The coatings are applied employing a variety of known surface treatment technologies including cold spray, thermal spray process, physical vapor deposition process (PVD), and slurry coating.

Methods for depositing a low resistivity nickel silicide layer used in forming an interconnect and electronic devices formed using the methods are described herein. In one embodiment, a method for depositing a layer includes positioning a substrate on a substrate support in a processing chamber, the processing chamber having a nickel target and a silicon target disposed therein, the substrate facing portions of the nickel target and the silicon target each having an angle of between about 10 degrees and about 50 degrees from the target facing surface of the substrate, flowing a gas into the processing chamber, applying an RF power to the nickel target and concurrently applying a DC power to the silicon target, concurrently sputtering silicon and nickel from the silicon and nickel targets, respectively, and depositing a Ni.sub.xSi.sub.1-x layer on the substrate, where x is between about 0.01 and about 0.99.

A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 m or more per 80000 mm.sup.2 on the sputtering surface.

Methods for forming a nickel silicide material on a substrate are disclosed. The methods include depositing a first nickel silicide seed layer atop a substrate at a temperature of about 15 C. to about 27 C., annealing the first nickel silicide seed layer at a temperature of 400 C. or less such as over 350 C.; and depositing a second nickel silicide layer atop the first nickel silicide seed layer at a temperature of about 15 C. to about 27 C. to form the nickel silicide material.