A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

A method of making a light weight housing for an internal component is provided. The method including the steps of: forming a first metallic foam core into a desired configuration; forming a second metallic foam core into a desired configuration; inserting an internal component into the first metallic foam core; placing the second metallic foam adjacent to the first metallic core in order to secure the internal component between the first metallic foam core and the second metallic foam core; and applying an external metallic shell to an exterior surface of the first metallic foam core and the second metallic foam core.

A low friction top coat over a multilayer metal/ceramic bondcoat provides a conductive substrate, such as a rotary tool, with wear resistance and corrosion resistance. The top coat further provides low friction and anti-stickiness as well as high compressive stress. The high compressive stress provided by the top coat protects against degradation of the tool due to abrasion and torsional and cyclic fatigue. Substrate temperature is strictly controlled during the coating process to preserve the bulk properties of the substrate and the coating. The described coating process is particularly useful when applied to shape memory alloys.

The present invention concerns substrates coated with an Mo.sub.1-x-ySi.sub.XB.sub.Y layer, said layer comprising the T2 phase, and a method for the production thereof.

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

The invention provides a method for producing a PVD anti-bacterial film on plastic. By adoption of the technical scheme, film plating can be achieved on the premise of not damaging a plastic workpiece without heating during the whole process, and a titanium target and a silicon target are used for plating a base film; plastic mainly contains a large quantity of carbon atoms and silicon atoms and has good bonding force, so that the bonding force of the film and the workpiece can be increased by plating the base film through the titanium target and the silicon target; a silver target is added for sputtering after the base film is plated, so that silver with an anti-bacterial effect is evenly distributed in a titanium silicide film, and the anti-bacterial film with the anti-bacterial effect is formed.

A method of fabricating a cobalt silicide layer includes providing a substrate disposed in a chamber. A deposition process is performed to form a cobalt layer covering the substrate. The deposition process is performed when the temperature of the substrate is between 50 C. and 100 C., and the temperature of the chamber is between 300 C. and 350 C. After the deposition process, an annealing process is performed to transform the cobalt layer into a cobalt silicide layer. The annealing process is performed when the substrate is between 300 C. and 350 C., and the duration of the annealing process is between 50 seconds and 60 seconds.

Methods for depositing a low resistivity nickel silicide layer used in forming an interconnect and electronic devices formed using the methods are described herein. In one embodiment, a method for depositing a layer includes positioning a substrate on a substrate support in a processing chamber, the processing chamber having a nickel target and a silicon target disposed therein, the substrate facing portions of the nickel target and the silicon target each having an angle of between about 10 degrees and about 50 degrees from the target facing surface of the substrate, flowing a gas into the processing chamber, applying an RF power to the nickel target and concurrently applying a DC power to the silicon target, concurrently sputtering silicon and nickel from the silicon and nickel targets, respectively, and depositing a Ni.sub.xSi.sub.1-x layer on the substrate, where x is between about 0.01 and about 0.99.

The invention relates to an object having a coating arranged on at least one surface of the object, which comprises at least one antimicrobially active layer having an antimicrobial agent, wherein the agent comprises a copper (I) compound and/or a copper (II) compound.

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.