An apparatus for manufacturing a display device includes a mask assembly, the mask assembly including a silicon substrate having a first surface, a second surface opposite the first surface, and a first opening portion penetrating the first surface and the second surface, and a support substrate on the second surface, the support substrate having a second opening portion connected to the first opening portion. The first opening portion at the first surface is less in width than the first opening portion at the second surface.

The invention relates to apparatus and a method for depositing material onto substrates, particularly optical substrates, to form a coating thereon. The apparatus and method incorporates the use of a series of magnetrons provided to be controlled to sputter deposit material provided in targets mounted therein, on to the substrates. There is provided a voltage to the magnetrons to operate the same and the level of voltage which is required to form required coating or coating layer characteristics is determined by using monitoring apparatus, at least when forming the coating or coating layer for the first time. The appropriate voltage level data for operation of the magnetrons can be held in a database and subsequently used to control the voltage level when forming an identified coating or layers of coatings.

Certain example embodiments of this invention relate to sputtered aluminum second surface mirrors with permanent protective coatings optionally provided thereto, and/or methods of making the same. A mirror coating supported by a substrate may include, for example, first and second silicon-inclusive layers sandwiching a metallic or substantially metallic layer including aluminum, and an optional layer including Ni and/or Cr in direct contact with the metallic or substantially metallic layer comprising aluminum. A protective paint is disposed directly over and contacting an outermost layer of the mirror coating. The protective paint, once applied and cured, is adapted to survive seven day exposure to an 85 degree C. temperature at 85% relative humidity, as well as seven day exposure to a 49 degree C. temperature at 100% relative humidity.

A solar-thermal conversion member includes a -FeSi.sub.2 phase material. The solar-thermal conversion member exhibits a high absorptance for visible light at wavelengths of several hundred nm and a low absorptance for infrared light at wavelengths of several thousand nm and, as a consequence, efficiently absorbs visible light at wavelengths of several hundred nm and converts the same into heat and exhibits little thermal radiation due to thermal emission at temperatures of several hundred C. The solar-thermal conversion member may therefore efficiently absorb sunlight, provide heat, and prevent thermal radiation due to thermal emission.

A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

Disclosed herein are approaches for treating a film layer of a semiconductor device to modify an etch resistance of the film later. In one approach, a method may include forming a first film over a substrate base, depositing a second film over the first film, and introducing an inert species into the second film while the second film is deposited over the first film, wherein the inert species increases an etch-resistance of a first portion of the first film. The method may further include removing the second film by stopping deposition of the second film while continuing to introduce the inert species into the second film.

A pellicle membrane including emissive crystals in a matrix containing at least one element which forms a chemical bond with silicon having a bond dissociation energy of at least 447 kJ mol.sup.1. A method of manufacturing such a pellicle membrane, a pellicle assembly including such a pellicle membrane and a lithographic apparatus including such a pellicle assembly or pellicle membrane. Also the use of molybdenum silicon sulphide, oxide, selenide, or fluoride in a pellicle membrane. The use of such a pellicle membrane, pellicle assembly or lithographic apparatus in a lithographic apparatus or method.

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi.sub.2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSi.sub.x with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 m.sup.2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi.sub.2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSi.sub.x with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 m.sup.2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

A mirror layer for a lithographic apparatus, the mirror layer including at least one element which forms a chemical bond with silicon having a bond dissociation energy of at least 447 kJ mol.sup.1. Also a method of manufacturing such a mirror layer, a mirror including such a mirror layer, and a lithographic apparatus comprising such a mirror layer or mirror. Also the use of molybdenum silicon sulphide, oxide, selenide, or fluoride in a mirror layer or mirror and the use of such a mirror layer or mirror in a lithographic apparatus or method.