C23C14/08

FORMING METHOD OF PLASMA RESISTANT OXYFLUORIDE COATING LAYER
20230215701 · 2023-07-06 ·

The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

FORMING METHOD OF PLASMA RESISTANT OXYFLUORIDE COATING LAYER
20230215701 · 2023-07-06 ·

The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

Film-forming material and film
11691889 · 2023-07-04 · ·

A coating material containing an oxyfluoride of yttrium and having a Fisher diameter of 1.0 to 10 μm and a tap density TD to apparent density AD ratio, TD/AD, of 1.6 to 3.5. The coating material preferably has a pore volume of pores with a diameter of 100 μm or smaller of 1.0 cm.sup.3/g or less as measured by mercury intrusion porosimetry. A coating containing an oxyfluoride of yttrium and having a Vickers hardness of 200 HV0.01 or higher. The coating preferably has a fracture toughness of 1.0×10.sup.2 Pa.Math.m.sup.1/2 or higher.

Antireflection hard coating film and preparation method thereof

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a high refractive index layer, and a low refractive index layer are laminated on a substrate, the film having suppressed curling, and excellent hardness and antireflection performance.

Antireflection hard coating film and preparation method thereof

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a conductive layer, and a low refractive index layer are laminated on a substrate, the film having excellent hardness, anti-curling property, antireflection performance, antifouling performance, and antistatic performance.

Metal-oxide semiconductor evaporation source equipped with variable temperature control module

A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.

Metal-oxide semiconductor evaporation source equipped with variable temperature control module

A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.

ANTI-MICROBIAL COATING PHYSICAL VAPOR DEPOSITION SUCH AS CATHODIC ARC EVAPORATION
20230002881 · 2023-01-05 ·

A bioactive coated substrate includes a base substrate, a first interlayer disposed over the base substrate, an outermost bioactive layer disposed on the first interlayer, and a topcoat layer disposed on the outermost bioactive layer. Characteristically, a plurality of microscopic openings extending through the topcoat layer and the outermost bioactive layer expose the first interlayer and the outermost bioactive layer. A method for forming the bioactive coated substrate is also provided.

CORAL REEF-LIKE NICKEL PHOSPHIDE-TUNGSTEN OXIDE NANOCOMPOSITE, METHOD FOR PREPARING THE CORAL REEF-LIKE NICKEL PHOSPHIDE-TUNGSTEN OXIDE NANOCOMPOSITE AND CATALYST FOR ELECTROCHEMICAL WATER SPLITTING INCLUDING THE CORAL REEF-LIKE NICKEL PHOSPHIDE-TUNGSTEN OXIDE NANOCOMPOSITE

A coral reef-like nickel phosphide-tungsten oxide nanocomposite is disclosed. The coral reef-like nickel phosphide-tungsten oxide nanocomposite has a structure in which algae-like transition metal-doped nickel phosphide nanosheets are deposited on coral-like tungsten oxide nanostructures grown vertically on a substrate. This structure allows the coral reef-like nickel phosphide-tungsten oxide nanocomposite to have a large surface area, which leads to a significant increase in the number of catalytic active sites, and ensures high conductivity and electrochemical stability of the coral reef-like nickel phosphide-tungsten oxide nanocomposite. Due to these advantages, the coral reef-like nickel phosphide-tungsten oxide nanocomposite has a low overpotential and superior hydrogen evolution reaction or oxygen evolution reaction efficiency when applied to a water splitting catalyst under alkaline conditions. Also disclosed are a method for preparing the coral reef-like nickel phosphide-tungsten oxide nanocomposite and a catalyst for electrochemical water splitting including the coral reef-like nickel phosphide-tungsten oxide nanocomposite.

Resistance-area (RA) control in layers deposited in physical vapor deposition chamber

Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.