Patent classifications
C23C14/08
FORMING METHOD OF PLASMA RESISTANT OXYFLUORIDE COATING LAYER
The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.
FORMING METHOD OF PLASMA RESISTANT OXYFLUORIDE COATING LAYER
The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.
Film-forming material and film
A coating material containing an oxyfluoride of yttrium and having a Fisher diameter of 1.0 to 10 μm and a tap density TD to apparent density AD ratio, TD/AD, of 1.6 to 3.5. The coating material preferably has a pore volume of pores with a diameter of 100 μm or smaller of 1.0 cm.sup.3/g or less as measured by mercury intrusion porosimetry. A coating containing an oxyfluoride of yttrium and having a Vickers hardness of 200 HV0.01 or higher. The coating preferably has a fracture toughness of 1.0×10.sup.2 Pa.Math.m.sup.1/2 or higher.
Antireflection hard coating film and preparation method thereof
Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a high refractive index layer, and a low refractive index layer are laminated on a substrate, the film having suppressed curling, and excellent hardness and antireflection performance.
Antireflection hard coating film and preparation method thereof
Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a conductive layer, and a low refractive index layer are laminated on a substrate, the film having excellent hardness, anti-curling property, antireflection performance, antifouling performance, and antistatic performance.
Metal-oxide semiconductor evaporation source equipped with variable temperature control module
A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.
Metal-oxide semiconductor evaporation source equipped with variable temperature control module
A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.
ANTI-MICROBIAL COATING PHYSICAL VAPOR DEPOSITION SUCH AS CATHODIC ARC EVAPORATION
A bioactive coated substrate includes a base substrate, a first interlayer disposed over the base substrate, an outermost bioactive layer disposed on the first interlayer, and a topcoat layer disposed on the outermost bioactive layer. Characteristically, a plurality of microscopic openings extending through the topcoat layer and the outermost bioactive layer expose the first interlayer and the outermost bioactive layer. A method for forming the bioactive coated substrate is also provided.
CORAL REEF-LIKE NICKEL PHOSPHIDE-TUNGSTEN OXIDE NANOCOMPOSITE, METHOD FOR PREPARING THE CORAL REEF-LIKE NICKEL PHOSPHIDE-TUNGSTEN OXIDE NANOCOMPOSITE AND CATALYST FOR ELECTROCHEMICAL WATER SPLITTING INCLUDING THE CORAL REEF-LIKE NICKEL PHOSPHIDE-TUNGSTEN OXIDE NANOCOMPOSITE
A coral reef-like nickel phosphide-tungsten oxide nanocomposite is disclosed. The coral reef-like nickel phosphide-tungsten oxide nanocomposite has a structure in which algae-like transition metal-doped nickel phosphide nanosheets are deposited on coral-like tungsten oxide nanostructures grown vertically on a substrate. This structure allows the coral reef-like nickel phosphide-tungsten oxide nanocomposite to have a large surface area, which leads to a significant increase in the number of catalytic active sites, and ensures high conductivity and electrochemical stability of the coral reef-like nickel phosphide-tungsten oxide nanocomposite. Due to these advantages, the coral reef-like nickel phosphide-tungsten oxide nanocomposite has a low overpotential and superior hydrogen evolution reaction or oxygen evolution reaction efficiency when applied to a water splitting catalyst under alkaline conditions. Also disclosed are a method for preparing the coral reef-like nickel phosphide-tungsten oxide nanocomposite and a catalyst for electrochemical water splitting including the coral reef-like nickel phosphide-tungsten oxide nanocomposite.
Resistance-area (RA) control in layers deposited in physical vapor deposition chamber
Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.