A method of providing an apparatus with a protective layer by simultaneously depositing carbon and seed material on the apparatus to form an intermediate layer, wherein the carbon and seed material have a percentage composition that varies as a function of the intermediate layer thickness; and then providing a diamond-like carbon (DLC) layer adjacent to the intermediate layer to produce the protective layer.

An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.

A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

A method and apparatus for open-air pulsed laser deposition with a low pressure zone maintained between the targets and the substrate by pumping the ambient gas out with a vacuum pump. The zone between the targets and the substrate may be shielded from ambient oxygen with an inert gas flowing from outside. The films can be deposited on a large substrate, which may be freely translated with respect to the targets. The apparatus may accommodate multiple pulsed laser beams and multiple targets. The targets may be remotely tilted in order to provide optimal plume overlapping on the substrate. At least one target may be deposited using the matrix assisted pulsed laser evaporation process. The target may be made of a polymer solution frozen with circulating liquid nitrogen.

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m.sup.2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

A mask includes a mask sheet provided with a plurality of open areas defined therein in a plan view and a mask frame which supports the mask sheet. The mask sheet includes a first portion including a first surface, where the first surface is configured to be in contact with a target substrate, and a second portion disposed on the first portion, extending from a top of the first portion in a first direction and including a second surface defining the open area. The second surface is an inclined surface inclined downward with respect to the first direction, and the first direction is parallel to a plane in which the first surface is included.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of the substrate. The system includes a heater configured to heat the substrate and a positioning mechanism that allows dynamic adjusting of an orthogonal distance, a lateral distance, and a tilt angle of an exit aperture of a material source relative to the substrate. In some embodiments, the dynamic adjusting is based on a desired layer uniformity for a desired layer growth rate. In some embodiments, the orthogonal distance, the lateral distance, or the tilt angle depends on a predetermined material ejection spatial distribution of the material source.

An apparatus for coating at least a first plurality of articles each article thereof having at least a first surface to be coated is disclosed. The apparatus includes an emission source for directing emission elements towards the first surfaces of the plurality of articles, at least one support member for supporting the first plurality of articles, wherein support member supports the first plurality of articles such that the first surface is exposed to the path of emission from said emission source, and a drive assembly for moving the support member such that the first plurality of articles is moveable with respect to the path of emission from said emission source.