Organic vapor jet printing (OVJP) devices and techniques are provided that use a solid materials sublimation source to provide material for deposition on a substrate. Carrier gas from a carrier gas source entrains vapor from the solid material within each sublimation source for transport to a print head within a deposition chamber. The sublimation source includes a sufficiently long internal flow path to achieve an acceptable level of material saturation of the carrier gas.

The present invention discloses a vacuum coating device, comprising: a crucible; an induction heater provided on the periphery of the crucible; a flow distribution box connected to the top of said crucible via a steam pipe. Wherein said flow distribution box is provided inside with a horizontal pressure stabilizing plate, said flow distribution box is connected on the top with a nozzle, said steam pipe is provided with a pressure regulating valve, and said pressure stabilizing plate has a multi-hole structure. The lower surface of said pressure stabilizing plate is connected to a horizontal flow suppression plate, and a space is formed between the side of said flow suppression plate and the inner wall of said flow distribution box. A jet moderating zone is formed between the joint where said flow distribution box and said steam pipe are connected and the lower surface of said pressure stabilizing plate, and a jet accelerating zone is formed between the upper surface of said pressure stabilizing plate and the joint where said flow distribution box and said nozzle are connected. When the high-temperature steam reaches the low-temperature steel plate, a uniform coating can be formed on the steel plate surface.

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.

Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.

An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y.sub.3Al.sub.5O.sub.12, Y.sub.4Al.sub.2O.sub.9, Er.sub.2O.sub.3, Gd.sub.2O.sub.3, Er.sub.3Al.sub.5O.sub.12, Gd.sub.3Al.sub.5O.sub.12 and a ceramic compound comprising Y.sub.4Al.sub.2O.sub.9 and a solid-solution of Y.sub.2O.sub.3—ZrO.sub.2.

An organic vapor phase deposition system is provided. The system may include a main reactor defined by a main reactor wail, at least two source barrels configured to introduce at least two organic vapors into the main reactor, and a substrate stage positioned in the main reactor and at least one carrier gas injection line configured to distribute a carrier gas along the main reactor wall, which reduces condensation of the organic vapors onto the main reactor wall as the organic vapors flow toward the substrate stage. A method of fabricating an organic film using organic vapor phase deposition is also provided.

A chamber component for a process chamber comprises a ceramic body and one or more protective layer on at least one surface of the ceramic body, wherein the one or more protective layer comprises Y.sub.3Al.sub.5O.sub.12 having a dielectric constant of 9.76+/−up to 30% and a hermiticity of 4.4E-10 cm.sup.3/s+/−up to 30%.

Embodiments of the disclosed subject matter provide a device including a carrier plate, and a die including a mating surface with a patterned thin film of metal or metal oxide surface bonded to the carrier plate using a solder preform with voids that overlay the patterned thin film on the die, where the oxide surface is disposed opposite a moat in a mating surface of the carrier plate, and where the voided regions remain free of solder when the solder is reflowed.

Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.