Methods for forming anode structures are provided and include transferring a flexible substrate a first deposition chamber arranged downstream from a first spool chamber, the first deposition chamber containing a first coating drum capable of guiding the flexible substrate past a first plurality of deposition units, and guiding the flexible substrate past the first plurality of deposition units while depositing a lithium metal film on the flexible substrate via the first plurality of deposition units. The method also includes transferring the flexible substrate from the first deposition chamber to a second deposition chamber, the second deposition chamber containing a second coating drum capable of guiding the flexible substrate past a second deposition unit containing a crucible capable of depositing ceramic on the lithium metal film, and guiding the flexible substrate past the crucible while depositing a ceramic protective film on the lithium metal film via the evaporation crucible.

Methods for forming anode structures are provided and include transferring a flexible substrate a first deposition chamber arranged downstream from a first spool chamber, the first deposition chamber containing a first coating drum capable of guiding the flexible substrate past a first plurality of deposition units, and guiding the flexible substrate past the first plurality of deposition units while depositing a lithium metal film on the flexible substrate via the first plurality of deposition units. The method also includes transferring the flexible substrate from the first deposition chamber to a second deposition chamber, the second deposition chamber containing a second coating drum capable of guiding the flexible substrate past a second deposition unit containing a crucible capable of depositing ceramic on the lithium metal film, and guiding the flexible substrate past the crucible while depositing a ceramic protective film on the lithium metal film via the evaporation crucible.

A mask manufacturing method includes a step of providing a metal substrate having a plurality of virtual zones on its surface, using a plurality of nozzles to spray an etching solution on the surface, wherein the virtual zones include a first and a second zone, and the metal substrate has a first thickness and a second thickness respectively in an unit area of the first zone and the second zone, wherein the first thickness is greater than the second thickness; the step of using the nozzles to spray the etching solution on the surface further includes respectively using a first spraying pressure and a second spraying pressure to spray the etching solution on the first zone and the second zone, and the first spraying pressure is greater than the second spraying pressure. The invention also provides a mask manufacturing device.

A mask manufacturing method includes a step of providing a metal substrate having a plurality of virtual zones on its surface, using a plurality of nozzles to spray an etching solution on the surface, wherein the virtual zones include a first and a second zone, and the metal substrate has a first thickness and a second thickness respectively in an unit area of the first zone and the second zone, wherein the first thickness is greater than the second thickness; the step of using the nozzles to spray the etching solution on the surface further includes respectively using a first spraying pressure and a second spraying pressure to spray the etching solution on the first zone and the second zone, and the first spraying pressure is greater than the second spraying pressure. The invention also provides a mask manufacturing device.

Systems and techniques for depositing organic material on a substrate are provided, in which one or more shield gas flows prevents contamination of the substrate by the chamber ambient. Thus, multiple layers of the same or different materials may be deposited in a single deposition chamber, without the need for movement between different deposition chambers, and with reduced chance of cross-contamination between layers.

Systems and techniques for depositing organic material on a substrate are provided, in which one or more shield gas flows prevents contamination of the substrate by the chamber ambient. Thus, multiple layers of the same or different materials may be deposited in a single deposition chamber, without the need for movement between different deposition chambers, and with reduced chance of cross-contamination between layers.

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.

A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.

A crystal raw material loading device and a crystal growth device includes a plurality of bearing units which are arranged adjacent to each other horizontally in turn, and the multiple bearing units include a first bearing unit arranged at one end of a small plane far away from the seed crystal bearing device. Along the direction from one end of the small plane far away from the seed crystal to one end of the small plane close to the seed crystal, from the first bearing unit to the bearing unit on the side of the small plane close to the seed crystal, the height of the raw material that can be carried by each bearing unit is reduced in turn.