A coated article is described herein that may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test.

A metal-Si based powder contains a metal-Si based particle including a plurality of crystal phase grains. The crystal phase grains include a crystal phase containing a compound of a metal and Si. The crystal phase grains have an average grain size of, for example, 20 μm or less. The metal-Si based particle has an average particle size of, for example, 5 to 100 μm.

A sputtering apparatus includes a rotary target extending in a first direction, a gas supply bar disposed on the rotary target, and a substrate holder positioned opposite the gas supply bar with respect to the rotary target. The gas supply bar includes a first flow path extending in the first direction, and a second flow path spaced apart from the first flow path in the first direction and separated from the first flow path.

Examples disclosed herein relate to an apparatus and method of forming thin film layers on a substrate. A first piezoelectric material layer is deposited on the substrate in a first chamber. The first piezoelectric material layer is formed on the substrate while the substrate is at a first temperature. A second piezoelectric material layer is deposited on the first piezoelectric material layer after cooling the substrate to a second temperature. The second temperature is lower than the first temperature. The first piezoelectric material layer and the second piezoelectric material layer both comprise a first piezoelectric material.

A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

A mask and a method of manufacturing the same are disclosed. The method of manufacturing a mask includes forming a conductive layer on a pattern region and an auxiliary region around the pattern region of a substrate, placing the substrate including the conductive layer in a plating bath, forming a plating layer on the conductive layer, and separating the substrate and the conductive layer from the plating layer.

A material includes a transparent substrate coated with a stack including at least one functional metal layer based on silver and at least two dielectric coatings, each dielectric coating including at least one dielectric layer, in such a way that each functional metal layer is positioned between two dielectric coatings, wherein the stack includes a layer based on silicon oxide having a thickness of greater than or equal to 12 nm located directly in contact with the substrate.

A coated substrate for an electronic device can include a substrate, a physical vapor deposition layer over the substrate, and an anti-fingerprint layer over the physical vapor deposition layer. The physical vapor deposition layer can include an alloy of gold and platinum. The anti-fingerprint layer can include an ultraviolet radiation-cured polymer mixed with an anti-fingerprint material. The anti-fingerprint material can include a silane, a fluorinated polymer, a hydrophobic polymer, or a combination thereof.

A coated substrate for an electronic device can include a substrate, a physical vapor deposition layer over the substrate, and an anti-fingerprint layer over the physical vapor deposition layer. The physical vapor deposition layer can include an alloy of gold and platinum. The anti-fingerprint layer can include an ultraviolet radiation-cured polymer mixed with an anti-fingerprint material. The anti-fingerprint material can include a silane, a fluorinated polymer, a hydrophobic polymer, or a combination thereof.

Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.

An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm.sup.2; and the yttrium ingot has a relative density of greater than or equal to 96%.