A compound semiconductor has a high electron concentration of 5×10.sup.19 cm.sup.−3 or higher, exhibits an electron mobility of 46 cm.sup.2/V.Math.s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

A compound semiconductor has a high electron concentration of 5×10.sup.19 cm.sup.−3 or higher, exhibits an electron mobility of 46 cm.sup.2/V.Math.s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

A sputtering target comprising a top coat including a composition of lithium cobalt oxide LiyCozOx. x is smaller than or equal to y+z, and the lithium cobalt oxide has an X-Ray diffraction pattern with a peak P2 at 44°±0.2° 2-theta. The X-Ray diffraction pattern is measured with an X-Ray diffractometer with CuKα1 radiation.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

The current invention describes a method of manufacturing a porous dielectric material, the method comprising (a) providing a porous template, (b) coating the porous template with an inorganic dielectric material or a precursor of an inorganic dielectric material to form a coated porous template, (c) treating the coated porous template to remove the porous template and to form a porous structure of dielectric material from the coating of inorganic dielectric material or precursor of an inorganic dielectric material, and (d) combining the formed porous structure of dielectric material with a coating polymer to form the porous dielectric material. The invention also relates to RF components on a substrate material, with a conductive material deposited on a porous dielectric material.

The current invention describes a method of manufacturing a porous dielectric material, the method comprising (a) providing a porous template, (b) coating the porous template with an inorganic dielectric material or a precursor of an inorganic dielectric material to form a coated porous template, (c) treating the coated porous template to remove the porous template and to form a porous structure of dielectric material from the coating of inorganic dielectric material or precursor of an inorganic dielectric material, and (d) combining the formed porous structure of dielectric material with a coating polymer to form the porous dielectric material. The invention also relates to RF components on a substrate material, with a conductive material deposited on a porous dielectric material.

A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

The present disclosure relates to coated non-metallic substrates and coated metallic substrates, and methods for producing such coated substrates. A variant of the method is characterized in that a mat or glossy coating is underneath a metallic layer obtained in some cases by way of vapor deposition and/or sputtering. In another variant, the metallic is sufficiently thin so that it remains transparent or translucent to visible light. The coated substrates may include multiple layers such as metallic layers, polysiloxane layers, a color layer, a conversion layer, a primer layer, and/or a transparent or colored layer. An application system for applying a metallic layer to at least one surface of a substrate may include a plasma generator and/or a corona system for treating one or more layers by plasma treatment and/or corona treatment.

A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.