A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a high refractive index layer, and a low refractive index layer are laminated on a substrate, the film having suppressed curling, and excellent hardness and antireflection performance.

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a conductive layer, and a low refractive index layer are laminated on a substrate, the film having excellent hardness, anti-curling property, antireflection performance, antifouling performance, and antistatic performance.

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

A thin walled balloon formed in polymer tubing has a patterned metal layer on its outer surface, created by physical vapor deposition (PVD). The pattern is defined by a stencil mask assembled around the balloon, with the balloon inflated therein. The PVD occurs without deforming or degrading the polymer material of the balloon, by actively pulling heat away from the balloon a) by forming the stencil mask out of metal; b) by providing a metal heat conduction path away from the balloon to a heat sink, such as outside the vacuum chamber, and/or c) by flow of a cooling fluid within the balloon during the PVD process. Proper PVD process parameters are selected to minimize heat generation, such as having argon pressure in the range of 0.8 to 1.2 milli-torr and generating the plasma at a power of less than about 200 watts/ square inch of effective target surface area.

A thin walled balloon formed in polymer tubing has a patterned metal layer on its outer surface, created by physical vapor deposition (PVD). The pattern is defined by a stencil mask assembled around the balloon, with the balloon inflated therein. The PVD occurs without deforming or degrading the polymer material of the balloon, by actively pulling heat away from the balloon a) by forming the stencil mask out of metal; b) by providing a metal heat conduction path away from the balloon to a heat sink, such as outside the vacuum chamber, and/or c) by flow of a cooling fluid within the balloon during the PVD process. Proper PVD process parameters are selected to minimize heat generation, such as having argon pressure in the range of 0.8 to 1.2 milli-torr and generating the plasma at a power of less than about 200 watts/ square inch of effective target surface area.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas; preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere having only nitrogen gas as the reactive gas, wherein the Ti targets are preferably operated by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.