The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Certain examples described herein relate to a sputter deposition apparatus including a substrate holder, a target loader, a plasma source to generate a plasma, and a magnet arrangement. The substrate holder is to position a substrate in a sputter deposition zone for sputter deposition of target material from a first target to the substrate in use. The target loader is to move a second target from a target priming zone into the sputter deposition zone for sputter deposition of target material from the second target to the substrate in use. The magnet arrangement configured to confine the plasma within the apparatus to the target priming zone and the sputter deposition zone. Within the target priming zone, a respective target is exposed to the plasma in use. The sputter deposition zone provides for sputter deposition of target material.

A sputter deposition apparatus including: a substrate support assembly arranged to support a substrate; a target support assembly arranged to support at least one sputter target for use in a sputter deposition of a target material onto the substrate; a plasma generation arrangement arranged to provide plasma for said sputter deposition; and a cartridge arranged to contain the substrate with deposited target material after said sputter deposition. The cartridge is removable from the sputter deposition apparatus.

A sputter deposition apparatus including: a substrate support assembly arranged to support a substrate; a target support assembly arranged to support at least one sputter target for use in a sputter deposition of a target material onto the substrate; a plasma generation arrangement arranged to provide plasma for said sputter deposition; and a cartridge arranged to contain the substrate with deposited target material after said sputter deposition. The cartridge is removable from the sputter deposition apparatus.

A nickel alloy sputtering target comprises: a nickel alloy containing an element capable of decreasing the Curie temperature of nickel, wherein an area ratio of a Ni phase having a Ni content of 99.0 mass % or more is 13% or less and an average crystal grain diameter is 100 gm or less. It is preferred that an area ratio of a high-purity Ni phase having a Ni content of 99.5 mass % or more be 5% or less.

Provided is a sputtering target to be used for forming a granular magnetic thin film in which FePt magnetic grains are isolated by an oxide and which constitutes a heat-assisted magnetic recording medium having enhanced uniaxial magnetic anisotropy, thermal stability, and SNR (signal-to-noise ratio).

The sputtering target for a heat-assisted magnetic recording medium contains an FePt alloy and a nonmagnetic material as main components, where the nonmagnetic material is an oxide having a melting point of 800° C. or higher and 1100° C. or lower.

Provided is an optical filter capable of reducing the dependency on the angle of light incidence. An optical filter 1 includes a hydrogenated silicon-containing film 4, wherein in a Raman spectrum of the hydrogenated silicon-containing film 4 measured by Raman spectroscopy a ratio (SiH/SiH.sub.2) obtained from a ratio between an area of a peak derived from SiH and an area of a peak derived from SiH.sub.2 is 0.7 or more.

Provided is an optical filter capable of reducing the dependency on the angle of light incidence. An optical filter 1 includes a hydrogenated silicon-containing film 4, wherein in a Raman spectrum of the hydrogenated silicon-containing film 4 measured by Raman spectroscopy a ratio (SiH/SiH.sub.2) obtained from a ratio between an area of a peak derived from SiH and an area of a peak derived from SiH.sub.2 is 0.7 or more.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.