C23C14/34

NANO COMPOSITE COATING HAVING SHELL-SIMULATED MULTI-ARCH STRUCTURE AS WELL AS PREPARATION METHOD AND APPLICATION THEREOF

The preparation method for a nano composite coating having a shell-simulated multi-arch structure includes: constructing a discontinuous metal seed layer using a vacuum plating technology; and inducing the deposition of a continuous multi-arch structure layer utilizing the discontinuous metal seed layer, thereby realizing the controllable orientated growth of the nano composite coating having the shell-simulated multi-arch structure. The nano composite coating having the shell-simulated multi-arch structure is of a red abalone shell-simulated nacreous layer aragonite structure, meanwhile has high hardness and high temperature resistance, has excellent performances such as high breaking strength, low friction coefficient and corrosion and abrasion resistance in seawater under the condition of maintaining good breaking tenacity, is simple and controllable in preparation process and low in cost, has unlimited workpiece shapes, is easily produced on large scale, and has huge potential in the fields of new energy, efficiency power, ocean engineering, nuclear energy, and micro-electronic/optoelectronic devices.

Reactive sputter deposition of dielectric films
11584982 · 2023-02-21 · ·

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

Protective coating for a thermally stressed structure

Provided is a method for arranging a protective coating for a thermally stressed structure, having at least one layer of alpha-aluminium oxide or of element-modified alpha-aluminium oxide, and wherein the protective coating is applied by reactive cathodic arc vaporization. A protective coating produced by the method and a component having a protective coating is also provided.

Fe—Co—Al alloy magnetic thin film

An Fe—Co—Al alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The Fe—Co—Al alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The Fe—Co—Al alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth ΔH at 30 GHz of less than 70 Oe.

Fe—Co—Al alloy magnetic thin film

An Fe—Co—Al alloy magnetic thin film contains, in terms of atomic ratio, 20% to 30% Co and 1.5% to 2.5% Al. The Fe—Co—Al alloy magnetic thin film has a crystallographic orientation such that the (100) plane is parallel to a substrate surface and the <100> direction is perpendicular to the substrate surface. The Fe—Co—Al alloy magnetic thin film has good magnetic properties, that is, a magnetization of 1440 emu/cc or more, a coercive force of less than 100 Oe, a damping factor of less than 0.01, and an FMR linewidth ΔH at 30 GHz of less than 70 Oe.

Sputter trap having a thin high purity coating layer and method of making the same

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.

Inorganic solid-state electrochromic module containing inorganic transparent conductive film

An inorganic solid-state electrochromic module containing an inorganic transparent conductive film, including a transparent substrate and a first transparent conductive layer, a first transparent metal layer, a first transparent protective layer, an inorganic electrochromic layer, an inorganic ion conductive layer, an inorganic ion storage layer, a second transparent metal layer, a second transparent protective layer, a second transparent conductive layer, a encapsulating film and a transparent front plate successively formed on the transparent substrate.

Inorganic solid-state electrochromic module containing inorganic transparent conductive film

An inorganic solid-state electrochromic module containing an inorganic transparent conductive film, including a transparent substrate and a first transparent conductive layer, a first transparent metal layer, a first transparent protective layer, an inorganic electrochromic layer, an inorganic ion conductive layer, an inorganic ion storage layer, a second transparent metal layer, a second transparent protective layer, a second transparent conductive layer, a encapsulating film and a transparent front plate successively formed on the transparent substrate.

SEALING ARTICLE COMPRISING METAL COATING, METHOD OF MAKING AND METHOD OF USING THE SAME

A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

SEALING ARTICLE COMPRISING METAL COATING, METHOD OF MAKING AND METHOD OF USING THE SAME

A method of making a sealing article that includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.