The present invention relates to a method for producing a photochromic oxy-hydride material as well as a photochromic component. The method comprising the steps of: —first the formation on a substrate of a layer of an essentially oxygen free rare earth metal hydride with a predetermined thickness using a physical vapor deposition process; and—second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, said second step being performed in an environment having a water content defined by a water amount in air at sea level pressure with RH between >0% and 100% RH for temperatures between 0° C. and 40° C., preferably 25° Celsius.

The present invention relates to a method for producing a photochromic oxy-hydride material as well as a photochromic component. The method comprising the steps of: —first the formation on a substrate of a layer of an essentially oxygen free rare earth metal hydride with a predetermined thickness using a physical vapor deposition process; and—second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, said second step being performed in an environment having a water content defined by a water amount in air at sea level pressure with RH between >0% and 100% RH for temperatures between 0° C. and 40° C., preferably 25° Celsius.

Provided is an Fe—Pt—BN-based sputtering target that has a high relative density and that suppresses particle generation.

The Fe—Pt—BN-based sputtering target has, as a residue after dissolution in aqua regia measured by a procedure below, the particle size distribution in which D90 is 5.5 μm or less and a proportion of fine particles smaller than 1 μm is 35% or less. The procedure includes: (1) cutting out an about 4 mm-square sample piece from the sputtering target, followed by pulverizing to prepare a pulverized product; (2) classifying the pulverized product using sieves of 106 μm and 300 μm in opening size and collecting a powder that has passed through the 300 μm sieve and remained on the 106 μm sieve; (3) immersing the powder in aqua regia heated to 200° C. to prepare a residue-containing solution in which the powder has been dissolved; (4) filtering the residue-containing solution through a 5A filter paper specified in JIS P 3801 and drying a residue on the filter paper at 80° C. to prepare a residue powder; (5) dispersing the residue powder in water containing a surfactant to prepare a sample solution; and (6) setting the sample solution in a particle size analyzer and measuring the particle size distribution.

An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.

A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.

A metal circuit structure based on a flexible printed circuit (FPC) contains: a substrate, a first metal layer attached on the substrate, a second metal layer formed on the first metal layer, and an intermediate layer defined between the first metal layer and the second metal layer. A first surface of the intermediate layer is connected with the first metal layer, and a second surface of the intermediate layer is connected with the second metal layer. The intermediate layer is made of a first material, the second metal layer is made of a second material, and the first material of the intermediate layer does not act with the second material of the second metal layer.

A metal circuit structure based on a flexible printed circuit (FPC) contains: a substrate, a first metal layer attached on the substrate, a second metal layer formed on the first metal layer, and an intermediate layer defined between the first metal layer and the second metal layer. A first surface of the intermediate layer is connected with the first metal layer, and a second surface of the intermediate layer is connected with the second metal layer. The intermediate layer is made of a first material, the second metal layer is made of a second material, and the first material of the intermediate layer does not act with the second material of the second metal layer.

Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket.

Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket.