Fluorinated coupling agents and polymerizable compositions including such fluorinated coupling agents and at least one free-radically polymerizable monomer, oligomer, or mixture thereof. Multilayer films including a substrate and at least a first layer overlaying a surface of the substrate also are described, in which the at least first layer includes a (co)polymer obtained by polymerizing the foregoing polymerizable compositions. Processes for making a multilayer film using the polymerizable composition also are taught. Articles including the multilayer film also are disclosed, in which the article preferably is selected from a photovoltaic device, a display device, a solid-state lighting device, a sensor, a medical or biological diagnostic device, an electrochromic device, light control device, or a combination thereof.

A method for depositing a coating on a substrate (100), including a step of depositing a thin intermetallic layer (110) on the substrate (100), so as to obtain, at the end of this step, an external part (10) having a predetermined final colour.

Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

The present invention relates to a flexible substrate and a method of manufacturing same and, more particularly, to a flexible substrate and a method of manufacturing same, the flexible substrate having high flexibility, high transparency, and high conductivity, so as to be able to improve the quality of a flexible display device to which it is applied. To this end, the present invention provides a flexible substrate and a method of manufacturing same, the flexible substrate characterized by comprising: a flexible base material; an ITO thin film formed on the flexible base material; and a plurality of nano particles discontinuously distributed within the ITO thin film.

The present invention relates to a flexible substrate and a method of manufacturing same and, more particularly, to a flexible substrate and a method of manufacturing same, the flexible substrate having high flexibility, high transparency, and high conductivity, so as to be able to improve the quality of a flexible display device to which it is applied. To this end, the present invention provides a flexible substrate and a method of manufacturing same, the flexible substrate characterized by comprising: a flexible base material; an ITO thin film formed on the flexible base material; and a plurality of nano particles discontinuously distributed within the ITO thin film.

A transparent conductive film includes: a transparent film substrate; an optical adjustment layer; and a transparent conductive layer, in which the optical adjustment layer and the transparent conductive layer are laminated on a main surface of the transparent film substrate in this order; The optical adjustment layer includes a dry-type optical adjustment layer including an inorganic oxide. The transparent conductive layer includes a metal oxide including indium. The transparent conductive layer is crystalline and has an X-ray diffraction peak respectively at least on a (400) plane and a (440) plane. When the (400) plane has an X-ray diffraction peak intensity of I.sub.400 and the (440) plane has an X-ray diffraction peak intensity of I.sub.440, a ratio I.sub.440/I.sub.400 of the X-ray diffraction peak intensity is in a range from 1.0 to 2.2.

A transparent conductive film includes: a transparent film substrate; an optical adjustment layer; and a transparent conductive layer, in which the optical adjustment layer and the transparent conductive layer are laminated on a main surface of the transparent film substrate in this order; The optical adjustment layer includes a dry-type optical adjustment layer including an inorganic oxide. The transparent conductive layer includes a metal oxide including indium. The transparent conductive layer is crystalline and has an X-ray diffraction peak respectively at least on a (400) plane and a (440) plane. When the (400) plane has an X-ray diffraction peak intensity of I.sub.400 and the (440) plane has an X-ray diffraction peak intensity of I.sub.440, a ratio I.sub.440/I.sub.400 of the X-ray diffraction peak intensity is in a range from 1.0 to 2.2.

An arc deposition system includes a coating chamber and a central cathode target disposed within the coating chamber. At least two anodes surround the central cathode target. Each anode is positively biased with respect to the central cathode target such that each anode independently induces an associated racetrack erosion profile on the central cathode target. At least two magnetic components are located within the central cathode target. The magnetic components guide an associated arc that forms its associated racetrack erosion profile. Characteristically, each anode of the at least two anodes has an associated magnetic component.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.