In a ceramic capacitor which is low in ESL and suitable to be built into a substrate, widths of portions of a third external electrode on first and second principal surfaces in a length direction are A, widths of portions of the third external electrode on first and second side surfaces in the length direction are B, A>B is satisfied, and widths of portions of first and second external electrodes on the first and second principal surfaces in the length direction are C, widths of portions of the first and second external electrodes on the first and second side surfaces in the length direction are denoted by D, C>D is satisfied.

A ceramic capacitor which is low in ESL and suitable for being built into a substrate has a dimension in a length direction of a lowermost surface of a third external electrode which is in contact with a capacitor main body denoted by e1 and a dimension in the length direction of the uppermost surface of the third external electrode denoted by e2, and a relationship of e1<e2 is satisfied.

In a planar view of a ceramic capacitor that has low ESL and is embeddable into a substrate, lengths of first and second external electrodes are L1, lengths from portions of the first and second external electrodes farthest from a capacitor main body to portions closer to the capacitor main body by about 40% of a thickness of the first or second external electrode in a laminating direction are L2, a ratio L2/L1 is about 80% or more and about 90% or less. In the planar view, a length of a third external electrode is L3, a length from a portion of the third external electrode farthest from the capacitor main body to a portion closer to the capacitor main body by about 40% of a thickness of the third external electrode in the laminating direction is L4, a ratio L4/L3 is about 80% or more.

Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

The present invention relates to a magnetic recording medium including a substrate; an underlayer laminated upon the substrate; and a magnetic layer laminated upon the underlayer, wherein the underlayer includes a first underlayer containing a compound represented by a following general formula: MgO.sub.(1-X), where X is within a range of 0.07 to 0.25, the magnetic layer includes a first magnetic layer containing an alloy having a L1.sub.0 structure, and the alloy having the L1.sub.0 structure includes B, and the first underlayer is in contact with the first magnetic layer.

The present invention relates to a magnetic recording medium including a substrate; an underlayer laminated upon the substrate; and a magnetic layer laminated upon the underlayer, wherein the underlayer includes a first underlayer containing a compound represented by a following general formula: MgO.sub.(1-X), where X is within a range of 0.07 to 0.25, the magnetic layer includes a first magnetic layer containing an alloy having a L1.sub.0 structure, and the alloy having the L1.sub.0 structure includes B, and the first underlayer is in contact with the first magnetic layer.

A transparent electroconductive layer 3 includes a first main surface 5 and a second main surface 6 facing each other in a thickness direction. The transparent electroconductive layer 3 is a single layer extending in a plane direction perpendicular to the thickness direction. The transparent electroconductive layer 3 has a plurality of crystal grains 4, a plurality of first grain boundaries 7 partitioning the plurality of crystal grains 4 and having each of one end edge 9 and another end edge 10 in the thickness direction open in each of the first main surface 5 and the second main surface 6, and a second grain boundary 8 branching from a first intermediate portion 11 of one first grain boundary 7A and reaching a second intermediate portion 12 of another first grain boundary 7B.

A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage.

Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.