There is provided a metal-clad laminate in which the transmission loss of electrical signals can be reduced, a finer pitch of a circuit pattern is possible, a high precision and fine circuit can be formed, and the close adhesiveness of the metal film is excellent. The metal-clad laminate includes a coating film and a metal film laminated on a base material film in this order, wherein the metal film is a metal film formed by at least any formation method of plating, sputtering, and vapor deposition, and a surface roughness (Rz) of the coating film is 1 μm or less.

There is provided a metal-clad laminate in which the transmission loss of electrical signals can be reduced, a finer pitch of a circuit pattern is possible, a high precision and fine circuit can be formed, and the close adhesiveness of the metal film is excellent. The metal-clad laminate includes a coating film and a metal film laminated on a base material film in this order, wherein the metal film is a metal film formed by at least any formation method of plating, sputtering, and vapor deposition, and a surface roughness (Rz) of the coating film is 1 μm or less.

The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.

A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

An upright target structure includes a target main body. The target main body has a first surface and a second surface opposite to each other. The first surface is configured to connect with a back plate. The target main body further has a third surface, a fourth surface, a fifth surface and a sixth surface. The third surface connects with the first surface and the second surface. The fourth surface is opposite to the third surface and connects with the first surface. The fifth surface is opposite to the third surface and connects with the second surface. The sixth surface connects with the fourth surface and the fifth surface. The sixth surface is away from the first surface as getting close to the fifth surface.

A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber toprotect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.

The invention relates to a coating comprising at least one molybdenum-containing layer having molybdenum oxide, said molybdenum being essentially molybdenum monoxide. The invention further relates to a PVD process for producing the disclosed coating, in which the layer comprising the molybdenum monoxide is produced using arc evaporation. The invention also relates to a component that has said coating.

A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.

Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

A heat-assisted magnetic recording (HAMR) media stack is provided in which Iridium (Ir)-based materials may be utilized as a secondary underlayer instead of a Magnesium Oxide (MgO) underlayer utilized in conventional media stacks. Such Ir-based materials may include, e.g., pure Ir, Ir-based alloys, Ir-based compounds, as well as a granular Ir layer with segregants. The use of Ir or Ir-based materials as an underlayer provide advantages over the use of MgO as an underlayer. For example, DC sputtering can be utilized to deposit the layers of the media stack, where the deposition rate of Ir is considerably higher than that of MgO resulting in higher manufacturing production yields. Further still, less particles are generated during Ir-based layer deposition processes, and Ir-based underlayer can act as a better heat sink. Further still, the morphology and structure of a recording layer deposited on an Ir-based layer can be better controlled.