A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

The present invention describes an improved multilayer solar selective coating useful for solar thermal power generation. Solar selective coating of present invention essentially consists of Ti/Chrome interlayer, two absorber layers (AlTiN and AlTiON) an anti-reflection layer (AlTiO). Coating deposition process uses Ti and Al as the source materials, which are abundantly available and easy to manufacture as sputtering targets for industrial applications. The present invention allows deposition of all the layers in a single sputtering chamber on flat and tubular substrates with high absorptance and low emittance, thus making the process simpler and cost effective. The process of the present invention can be up-scaled easily for deposition on longer tubes with good uniformity and reproducibility. The coating of the present invention also displays improved adhesion, UV stability, corrosion resistance and stability under extreme environments.

A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of B.sub.xAl.sub.1-xN (0<x≦0.2).

A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of B.sub.xAl.sub.1-xN (0<x≦0.2).

According to the invention there is a method of depositing SiO.sub.2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.

The present invention provides a method for manufacturing a graphene composite electrode material, including the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1100° C.; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material. The method for manufacturing a graphene composite electrode material according to the present invention uses a temperature resistant glass substrate and a metal catalyst to directly grow a graphene film on a circuit pattern thereby requiring no transfer, not affected by solvent applied in transfer, having relatively high quality of film formation, requiring no etching, allowing for direct formation of a graphene composite electrode material, having a simple process, providing an effect of protection of the metal circuit pattern due to stable chemical property of graphene, and thus effectively extending the service life of the graphene composite electrode material.

The present invention provides a method for manufacturing a graphene composite electrode material, including the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1100° C.; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material. The method for manufacturing a graphene composite electrode material according to the present invention uses a temperature resistant glass substrate and a metal catalyst to directly grow a graphene film on a circuit pattern thereby requiring no transfer, not affected by solvent applied in transfer, having relatively high quality of film formation, requiring no etching, allowing for direct formation of a graphene composite electrode material, having a simple process, providing an effect of protection of the metal circuit pattern due to stable chemical property of graphene, and thus effectively extending the service life of the graphene composite electrode material.

The invention relates to the production of wear-resistant layers which are exposed to friction wear on surfaces of components of internal combustion engines. In the process, wear-resistant layers are formed on the respective surface by electric arc discharge under vacuum conditions. The wear-resistant layers are formed from at least approximately hydrogen-free tetrahedrally amorphous (ta-C) comprising a mixture of sp2 and sp3 hybridized carbon and have a microhardness of at least 3500 HV and an arithmetical mean roughness value Ra of 0.1 μm without a mechanical, physical and/or chemical surface processing taking place.

The invention relates to the production of wear-resistant layers which are exposed to friction wear on surfaces of components of internal combustion engines. In the process, wear-resistant layers are formed on the respective surface by electric arc discharge under vacuum conditions. The wear-resistant layers are formed from at least approximately hydrogen-free tetrahedrally amorphous (ta-C) comprising a mixture of sp2 and sp3 hybridized carbon and have a microhardness of at least 3500 HV and an arithmetical mean roughness value Ra of 0.1 μm without a mechanical, physical and/or chemical surface processing taking place.

A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10.sup.−4 to 2.8×10.sup.−4 Ω.Math.cm.